IPD50R520CP

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The IPD50R520CP is a 100V N-channel MOSFET that is designed to be integrated into a wide range of industrial and consumer electronics applications. The MOSFET is designed to meet stringent customer requirements for power dissipation, and can be used for a variety of purposes, including DC-DC converters, power supplies, and power amplifiers. The IPD50R520CP’s key features ensure that it can handle high temperatures and is able to run a variety of applications with power efficiency and reliability.

The IPD50R520CP is a single transistor, which is why it is commonly used for power control applications. The single device makes it cheaper to integrate and does not add any additional complexity to the application circuitry. The device has a 100V drain-source voltage rating and can handle up to 15A of current. Its maximum on-state resistance of 0.43 ohm makes it suitable for high power applications, while its maximum gate threshold voltage of 2.5V makes it useful in applications where the gate threshold needs to be kept low. The IPD50R520CP also has an integrated anti-parallel body diode, which makes it suitable for forward converter applications.

The working principle of the IPD50R520CP is based on the ‘Miller Effect’, which explains how a MOSFET operates. Typically, in a MOSFET, a voltage is applied to the gate and the channel is created between the source and the drain. The source to drain current is then proportional to the gate-source voltage. With the IPD50R520CP, the source-drain current is proportional to the gate-source voltage squared, which is known as the ‘Miller Effect’. This higher current gain gives the device a much higher power output than conventional MOSFETs.

The IPD50R520CP is a versatile device and can be used in many applications. It is commonly used for power control applications as it can efficiently deliver power and does not add additional complexity to the circuitry. It is also suitable for forward converter applications due to its integrated anti-parallel body diode. In addition, the IPD50R520CP\'s higher current gain gives it a much higher power output than conventional MOSFETs, making it suitable for a range of industrial and consumer electronics applications.

In summary, the IPD50R520CP is a 100V N-channel MOSFET that can handle up to 15A of current and has a maximum on-state resistance of 0.43 ohm. Its higher current gain, thanks to the Miller Effect, makes it suitable for high power applications, while its integrated anti-parallel body diode makes it suitable for forward converter applications. The IPD50R520CP is a versatile device and can be used in a variety of industrial and consumer electronic applications.

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