IPD50R950CEBTMA1 Allicdata Electronics
Allicdata Part #:

IPD50R950CEBTMA1TR-ND

Manufacturer Part#:

IPD50R950CEBTMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 500V 4.3A PG-TO252
More Detail: N-Channel 500V 4.3A (Tc) 34W (Tc) Surface Mount PG...
DataSheet: IPD50R950CEBTMA1 datasheetIPD50R950CEBTMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 34W (Tc)
FET Feature: Super Junction
Input Capacitance (Ciss) (Max) @ Vds: 231pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.2A, 13V
Drive Voltage (Max Rds On, Min Rds On): 13V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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The IPD50R950CEBTMA1 is a type of FET (Field Effect Transistor). FETs are active components which control the flow of electricity in a circuit. They differ from other types of transistors in that the flow of electricity is controlled by a field rather than the current flow between emitter and collector. The IPD50R950CEBTMA1 is a single field-effect transistor, which means that its output is controlled by a single field. It is also a MOSFET, which stands for Metal Oxide Semiconductor Field Effect Transistor. MOSFETs are able to operate at higher voltages and higher speeds than other types of FETs, and their output current is more stable.

The IPD50R950CEBTMA1 is most often used in high voltage switching applications, such as in DC-DC converters, power supplies, and other power management systems. It can also be used in lighting control and industrial control systems. It is especially useful in voltage-controlled switching applications, such as pulse width modulation.

The working principle of the IPD50R950CEBTMA1 is based on the MOSFET principle. The FET contains two terminals, a source and a drain, which are connected to the power or ground rail. The source terminal is connected to the input, while the drain is connected to the output. Between the source and drain terminals is a gate terminal, which is connected to a voltage source. This voltage source can be either positive or negative. When the voltage source is low, there is no current flow between the source and drain. When the voltage source is high, current will flow between the source and drain if the gate terminal is also high.

The voltage on the gate terminal will determine how much current is allowed to flow between the source and the drain. This is the main operating principle of the IPD50R950CEBTMA1, which allows it to switch between different voltage levels quickly and efficiently. It is also what makes the IPD50R950CEBTMA1 suitable for a variety of applications.

The IPD50R950CEBTMA1 is a reliable and efficient FET, and is ideal for high voltage power management systems. It can operate in both high and low voltage environments, and has a wide range of application fields, from industrial control to pulse width modulation. Its small size and reliable operation make it a popular choice for many projects.

The specific data is subject to PDF, and the above content is for reference

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