IPD5N03LAG Discrete Semiconductor Products |
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Allicdata Part #: | IPD5N03LAGINTR-ND |
Manufacturer Part#: |
IPD5N03LAG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 25V 50A TO252-3-11 |
More Detail: | N-Channel 25V 50A (Tc) Surface Mount PG-TO252-3 |
DataSheet: | IPD5N03LAG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 35µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2653pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 5V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 5.2 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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The IPD5N03LAG transistor is a special type of Field Effect Transistor (FET) rather than the base-emitter type seen in standard bipolar transistors. FETs allow for electronic signals to be changed with relative ease and without the need for complicated circuitry and expensive components. FETs are also excellent at providing low current control in a power device, making them ideal for a wide range of applications.
The IPD5N03LAG is a single FET, meaning it has only one junction, so the device is the simplest existing type of FET. This FET offers low gate input voltage, low number of inputs and outputs, and low on-resistance. As such, it is well-suited to controlling a wide range of load currents.
The IPD5N03LAG is a specific type of FET, a MOSFET, which stands for Metal Oxide Semiconductor Field Effect Transistor. This type of FET provides excellent current control, making it ideal for use in a wide range of applications. It does this by using an insulating layer between the channel and the gate. This layer prevents interfering electrons from entering, which allows for the current to be easily and accurately controlled. The insulating layer is also what makes the IPD5N03LAG a very low power device, and this is why it is suitable for use in a wide range of applications.
The IPD5N03LAG application field includes motor control and actuators, lighting control, power supplies, automotive, consumer electronic and industrial applications. It can be used for switching devices, power supplies, converters, regulators and amplifiers. Its low gate input voltage and low number of inputs and outputs make it suitable for a variety of applications, including telecommunications, consumer electronics, automotive, and industrial applications.
In terms of its working principle, the IPD5N03LAG is based on the principle of the MOSFET. MOSFETs work by controlling the current flow through a channel between the drain and source. This is done by applying a voltage to the gate, which in turn creates an electric field within the channel. This electric field attracts electrons, which then flow through the channel and create a current between the drain and source.
Applying a voltage to the gate will enable or disable current flow from the drain and to the source. This is the basic function of the MOSFET, and the IPD5N03LAG is no different. The IPD5N03LAG can be used to switch high currents on and off, as well as to accurately control the current that is flowing between the source and drain.
The IPD5N03LAG is an excellent choice for a variety of applications due to its low gate input voltage, low number of inputs and outputs, and low on-resistance. It is suitable for a wide range of applications, including motor control and actuators, lighting control, power supplies, automotive, consumer electronic and industrial applications. Furthermore, its simple operation makes it an ideal choice for those looking for a reliable FET with excellent current control.
The specific data is subject to PDF, and the above content is for reference
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