IPD600N25N3GATMA1

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IPD600N25N3GATMA1 is a N-Channel Enhancement Mode insulated-gate field-effect transistor (IGFET) with a MAXIMUM RATINGS (VDS = 25V，ID = 67A, RDS(ON) = 10mΩ @ 10V, VGS = 10V) and typical thermal resistance of 125℃/W under a 0.6mm x 1.3mm x 0.95mm package.

Due to its high speed, fast switching, low power gate drive capability, low resistance and high current density, the IPD600N25N3GATMA1 is designed for optimal applications such as general fast switching, DC-DC converters, motor control, automotive, industrial and consumer electronics.

The IPD600N25N3GATMA1 is a Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) which is designed to operate by current flow through a channel between the drain and source electrodes. It is also suit for various circuits such as low RDS(ON) regulatory circuit, DC buck or boost converter and level shifting circuit.

The IPD600N25N3GATMA1’s main feature is its self-owned N-Channel, which gives the device an enhanced performance on conducting low voltage yet high current. Moreover, the self-owned N-channel also minimizes the switching loss while providing increased thermal resistance.

In addition, the device also has a high suppression ratio that operates up to 25V of drain-to-source voltage, which makes it suitable for a variety of applications including switching power supplies, charger power management and UPS systems. Furthermore, the IPD600N25N3GATMA1 is designed for higher switching frequency with low gate power.

To conclude, the IPD600N25N3GATMA1 single MOSFET is a highly reliable, high-performance device designed for optimal applications. Its features such as self-owned N-channel, high suppression ratio and low gate power provide users with enhanced performance while providing increased thermal resistance and higher switching frequencies. This makes the device suitable for applications such as general fast switching, DC-DC converters, motor control, automotive, industrial and consumer electronics.

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