| Allicdata Part #: | IPD60R750E6BTMA1TR-ND |
| Manufacturer Part#: |
IPD60R750E6BTMA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 600V 5.7A TO252 |
| More Detail: | N-Channel 600V 5.7A (Tc) 48W (Tc) Surface Mount PG... |
| DataSheet: |  IPD60R750E6BTMA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 3.5V @ 170µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | PG-TO252-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 48W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 373pF @ 100V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 17.2nC @ 10V |
| Series: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 750 mOhm @ 2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5.7A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Tape & Reel (TR) |
Description
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The IPD60R750E6BTMA1 is a N-channel MOSFET in a space-saving 6.5mm x 8.0mm PAK package developed by Infineon Technologies. The device is suitable for use in many different applications, including motor drive and power conversion and DC-DC, AC-DC and PFC applications. ### ApplicationsIPD60R750E6BTMA1 can be used in a wide range of applications, such as:* DC-DC converters * Motor drives * AC/DC converters * Power Factor Correction (PFC)* Switch-mode power supplies* Other power management systems### Working PrincipleThe IPD60R750E6BTMA1 is a robust N-channel MOSFET with a low on-resistance of 750 mΩ and a wide VDSS range of 30 V to 100 V. The device comes with neutral-mode temperature control to reduce the temperature derating, and advanced low-threshold (LS) technology for low gate-charge operation. The high-speed power MOSFET employs advanced processes and design techniques to achieve a low on-resistance and gate-charge values. Its low threshold voltage improves switching performance, reducing dissipation and maximizing efficiency in high-frequency switching applications. The device is further helped by fast turn-on, fast body-diode recovery and low switching losses. The package of the IPD60R750E6BTMA1 eliminates the need for an external buffer loop. Additionally, it offers effective heat dissipation and enhanced reliability with high planarity and a flat, stress-free die attach. These features make the IPD60R750E6BTMA1 ideal for high-density, high-performance systems. In addition, the device has also been designed to provide EMI-reducing features, while its static dv/dt is high enough to handle the high voltage stresses required in resonant applications. It has also been designed with a low gate charge loop for fast switching and good thermal cycling. ### ConclusionThe IPD60R750E6BTMA1 is an ideal device for power management applications with its robustness, low on-resistance and wide VDSS range. Its advanced technology and system design make it suitable for a variety of applications, including DC-DC, AC-DC and PFC applications, motor drive and power conversion. A flat die attach provides better heat dissipation and improved reliability, and its low gate-charge loop improves switching performance and enhances efficiency.
The specific data is subject to PDF, and the above content is for reference
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