Allicdata Part #: | IPD60R380E6BTMA1-ND |
Manufacturer Part#: |
IPD60R380E6BTMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET NCH 600V 10.6A TO252 |
More Detail: | N-Channel 600V 10.6A (Tc) 83W (Tc) Surface Mount P... |
DataSheet: | IPD60R380E6BTMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.5V @ 300µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 155°C (TJ) |
Power Dissipation (Max): | 83W (Tc) |
FET Feature: | Super Junction |
Input Capacitance (Ciss) (Max) @ Vds: | 700pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 3.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10.6A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Bulk |
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IPD60R380E6BTMA1 is a high-voltage MOSFET that belongs to the a family of insulated gate field-effect transistors (IGFETs). It is physically packaged in the 20V-80A TO220-4L outline (SMD PowerPAK) with an Electroless NickelImmersion Gold finish. It is designed to act as a low-cost, yet high performance power switch for applications where fast switching performance and low resistance are desired. It is suitable for use as a switching device in motor drives, power converters, and other high-voltage applications. The device is also suitable for low-frequency switching.
The IPD60R380E6BTMA1 is a single, enhancement-mode MOSFET and is constructed on the Low Temperature Co-Fired Ceramic (LTCC) substrate to ensure low power losses, fast switching times, and long lifetime. It operates in a wide range of temperatures and exhibits exceptional reliability. The MOSFET has an isolation voltage rating of 600V, providing excellent thermal and electrical isolation between the drain and the source. The device features an extremely low on-resistance value, ensuring minimal losses due to resistive heating. It also features a maximum continuous drain current rating of 80A and a maximum drain-source voltage rating of 160V.
The IPD60R380E6BTMA1 operates on a Vgs of 10V to 16V and provides a maximum on-resistance of 0.09Ω. The on-resistance is further reduced using a Vgs in the interval of 8V to 12V. The device has a maximum gate charge of 35nC, which is optimized for fast switching speed. The minimum and maximum gate thresholds are -3V and 6V respectively. It also features a maximum surge current rating of 1.2A and a maximum load-source impedance of 0.2Ω. The device has an integrated protection feature which isolates the power stage from gate-source or gate-drain overvoltages.
The IPD60R380E6BTMA1 utilizes a power MOSFET topology that eliminates the need for an external driver. This results in a lower overall system cost and more efficient power utilization. The device has a high power density and is optimized for fast switching speed, ensuring minimal power losses in a variety of applications. The IPD60R380E6BTMA1 is designed to be used in motor drives, power converters, and other high-voltage applications where fast switching performance and low resistance are desired.
The specific data is subject to PDF, and the above content is for reference
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