IPD60R3K4CEAUMA1

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The IPD60R3K4CEAUMA1 is a field-effect transistor (FET) specifically designed for power switching applications. It is a member of the Power MOS family that is a combination of insulated-gate bipolar transistors (IGBTs) and FETs. It is rated at 3.7 A with a drain-source breakdown voltage of 60 V, making it the perfect choice for high-voltage and high-current design requirements.

The IPD60R3K4CEAUMA1 FET is commonly used in switching applications that require high efficiency and power density. It is designed to provide high-switching performance with low gate-drive voltage and low on-state resistance to help reduce switching losses and improve efficiency. It is also designed to provide very low gate charge, allowing designers to optimize the gate-drive voltage, reduce switching losses, and achieve higher power density. The device provides a fast switching speed, allowing it to support high-speed and low-latency operations.

The IPD60R3K4CEAUMA1 FET uses an insulated-gate construction. This insulated-gate construction eliminates the need for a gate-drive power supply, reducing BOM costs and power losses. It also provides superior noise immunity, enabling the device to be used in high-emission environments.

The working principle of the IPD60R3K4CEAUMA1 is based on the MOS-FET (metal-oxide-semiconductor field-effect transistor) structure. This structure is made of three distinct parts: the source, the gate, and the drain. In the IPD60R3K4CEAUMA1, a voltage applied to the gate controls the current flow between the source and the drain. This allows the device to act as an electronic switch, controlling the flow of current from the source to the drain.

To turn on the IPD60R3K4CEAUMA1, a voltage must be applied to the gate. This voltage, known as the gate-source voltage, must exceed the drain-source voltage by a certain threshold, known as the threshold voltage. When the gate-source voltage exceeds this threshold, a charge is built up in the gate-source capacitance, resulting in a depletion region around the gate. This depletion region acts like an insulator, preventing current from flowing from the source to the drain.

To turn off the IPD60R3K4CEAUMA1, the gate-source voltage must be reduced below the threshold. When this happens, the charge in the gate-source capacitance is reduced, allowing current to flow from the source to the drain.

The IPD60R3K4CEAUMA1 is a power switch specifically designed for high-voltage and high-current applications. It has a drain-source breakdown voltage of 60 V, making it the perfect choice for power switching applications. Its insulated-gate construction eliminates the need for a gate-drive power supply, reducing BOM costs and power losses. Its fast switching speed allows it to support high-speed and low-latency operations, while its low gate charge helps reduce switching losses and improve efficiency. The IPD60R3K4CEAUMA1 is an excellent choice for power switching applications that require high efficiency, high power density, and low gate-drive voltage.

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