IPD60N10S4L12ATMA1

Vgs(th) (Max) @ Id:	2.1V @ 46µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	PG-TO252-3-313
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	94W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3170pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	49nC @ 10V
Series:	Automotive, AEC-Q101, HEXFET®
Rds On (Max) @ Id, Vgs:	12 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	60A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The IPD60N10S4L12ATMA1 device is an enhancement-type, N-channel, vertical double-diffused MOSFET transistor with a greater than 12V drain-source breakdown voltage rating. The unique vertical configuration of the IPD60N10S4L12ATMA1 allows for tight control of the gate voltage, providing excellent stability and consistent on-state operation, as well as lower power consumption, over a wide range of operating temperatures. This makes it an attractive choice for a wide range of applications, including power management in automotive electronics, industrial, and medical devices.

The IPD60N10S4L12ATMA1 is a type of MOSFET device which uses majority carriers, namely electrons, as its main active conductive elements. MOSFET stands for “Metal-Oxide Semiconductor Field Effect Transistor” and refers to a class of devices that use insulating layers of metal and/or oxide to control the flow of electrons between two or more terminals. As its name implies, the IPD60N10S4L12ATMA1 uses an on-state N-channel MOSFET structure which creates a single, active device element whose performance is determined by its gate voltage. This voltage is regulated by the positive terminal of the device, which receives its input from a voltage source.

In a typical application, current flows into the drain terminal of the IPD60N10S4L12ATMA1 device and is controlled by the voltage applied to its gate terminal. When a signal is applied at the gate, the presence of electrons in the channel creates an inversion layer, which modifies the shape of the bandgap below it. This provides a barrier which restricts the movement of electrons and creates a channel of conductivity between the source and the drain. The increase in current will be dependent on the size of the voltage drop across the inversion layer as well as the magnitude of the applied signal.

This ensures that the IPD60N10S4L12ATMA1 is able to provide consistent, reliable, and efficient performance in a variety of applications. Its drain-source break-down rating provides an efficient power-handling capability, while its high input capacitance and low output impedance allow for efficient noise suppression and voltage-to-current conversion. As a result, the IPD60N10S4L12ATMA1 is an ideal choice for providing efficient and reliable power management for automotive, industrial, and medical applications.

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