IPD60R170CFD7ATMA1

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IPD60R170CFD7ATMA1 application field and working principle

IPD60R170CFD7ATMA1 is a Power MOSFET from Infineon designed for use in high power switching and switching mode power supplies (SMPS). It is an N-Channel enhancement mode MOSFET, with an insulation voltage of 600V and a drain-source breakdown voltage of 170V. The device has a gate-source withstand voltage of 20V, with a maximum gate-source voltage (10V) chosen to minimize on-state losses, reduce EMI, and enable hard-switching. The typical on-state resistance (RDS(on)) is just 0.17Ω, making this a very efficient device that can be used in highly power-hungry applications.

In general, power MOSFETs are widely applied in the fields of switching power suppliers, low and high frequency power conversion, refrigeration systems, air conditioners, motor control, and others. The main benefit of using the IPD60R170CFD7ATMA1 Power MOSFET is its low on-state resistance, which significantly reduces losses due to Joule heating in the device. This reduces overall power consumption, and also has the added benefit of generating less heat and less EMI than other devices.

In order to understand the working principle of the IPD60R170CFD7ATMA1, it is important to understand basic MOSFET physics. A MOSFET is made up of three layers: the drain, the source, and the gate– all of which are separated by an oxide layer. The drain is connected to the positive voltage, while the source is connected to ground. By applying a voltage between the gate and the source, a conductive channel is created between the drain and the source. This makes the MOSFET an electrical switch in which the on current is alomostly independent of the gate voltage, making it ideal for power applications.

In order to reduce the on-state resistance of the MOSFET, the channel must be wide enough to allow for the maximum current flow possibile. This is known as the gate-bias voltage, and is determined by how wide the conductive channel is. If the gate-bias voltage is too low, the MOSFET will act as an insulator; if it is too high, the MOSFET will behave as a short circuit. By controlling the width of the conductive channel, the IPD60R170CFD7ATMA1 is able to provide efficient switching between the source and the drain.

In conclusion, IPD60R170CFD7ATMA1 is an efficient enhancement-mode N-Channel MOSFET designed for use in high power switching and switching mode power supplies. It has an insulation voltage of 600V and a drain-source breakdown voltage of 170V, with a typical on-state resistance of just 0.17Ω. By controlling the width of the conductive channel, the device is able to effectively reduce losses due to Joule heating. Together with its hard-switching capabilities, the IPD60R170CFD7ATMA1 is an ideal device for power-hungry applications.

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