| Allicdata Part #: | IPL60R065C7AUMA1-ND |
| Manufacturer Part#: |
IPL60R065C7AUMA1 |
| Price: | $ 3.16 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET HIGH POWER_NEW |
| More Detail: | |
| DataSheet: | IPL60R065C7AUMA1 Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 2.84439 |
| Series: | * |
| Part Status: | Active |
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The IPL60R065C7AUMA1 is a single-channel, depletion-mode N-Channel MOSFET built on a silicone substrate. This MOSFET is specifically designed for use in mobile phones, digital TV receivers, and other applications requiring low-power wireless devices. It is a 60-V, 0.65-A N-Channel MOSFET with an on-resistance of 4.5-Ohm and a maximum drain current of 0.4A. This device is designed to be used in environments requiring high levels of efficiency and is suitable for use in circuits requiring very low ripple. It is also suitable for applications beyond mobile phones, including remote sensing, smart lighting, and alternative energy.
The basic principles of MOSFET operation remain the same, no matter what the specific application is. MOSFETs are unipolar devices, meaning that they are controlled by a single voltage. This voltage is applied to the gate electrode and determines the current flowing between the two source and drain terminals. When the gate voltage is zero, all the current flows from the source to the drain, effectively creating a short circuit between these terminals. As the gate voltage increases, the current between the source and drain decreases, forming a resistance between the two. This allows current to be controlled by adjusting the gate voltage.
In order to properly use this device, the gate voltage must be carefully controlled. Generally speaking, it should be set to a voltage that sits somewhere between the turn-on and turn-off values for the gate. This will allow the current to be accurately regulated, ensuring that the circuit is performing optimally. For example, if the application requires a high efficiency, the gate voltage should be set to the turn-off value. This will prevent any unnecessary current flow, which can result in losses.
In addition to controlling the current, MOSFETs can also be used as a switch element. By setting the gate voltage to the turn-on or turn-off threshold, the current will either be fully on or fully off. This can be a useful tool in sophisticated circuits that require precise control. It can also allow a system to be controlled remotely, using a separate voltage source to control the current.
The IPL60R065C7AUMA1 is an ideal choice for applications that require low-power wireless devices. Its low on-resistance ensures that minimal power is lost during operation. Additionally, its versatile gate voltage control allows for precise current control and switching, making it suitable for a wide range of applications. The IPL60R065C7AUMA1 is an excellent choice for any application requiring high levels of efficiency, accuracy, and control.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| IPL60R210P6AUMA1 | Infineon Tec... | 1.01 $ | 1000 | MOSFET N-CH 600V 4VSONN-C... |
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| IPL60R185C7AUMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 600V 13A 4VSO... |
| IPL60R650P6SATMA1 | Infineon Tec... | 0.46 $ | 1000 | MOSFET N-CH 600V 8THINPAK... |
| IPL60R360P6SATMA1 | Infineon Tec... | 0.57 $ | 1000 | MOSFET N-CH 600V 8THINPAK... |
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| IPL65R210CFDAUMA1 | Infineon Tec... | 1.2 $ | 1000 | MOSFET N-CH 4VSONN-Channe... |
| IPL60R125C7AUMA1 | Infineon Tec... | 1.74 $ | 1000 | MOSFET N-CH 600V 17A 4VSO... |
| IPL65R310E6AUMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 4VSONN-Channe... |
| IPL65R190E6AUMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 4VSONN-Channe... |
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| IPL60R255P6AUMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 4VSONN-C... |
| IPL60R065P7AUMA1 | Infineon Tec... | 3.07 $ | 1000 | MOSFET N-CH 4VSONN-Channe... |
| IPL60R105P7AUMA1 | Infineon Tec... | 2.0 $ | 3000 | MOSFET N-CH 4VSONN-Channe... |
| IPL60R185P7AUMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 650V 19A VSON... |
| IPL60R065C7AUMA1 | Infineon Tec... | 3.16 $ | 1000 | MOSFET HIGH POWER_NEW |
| IPL60R185CFD7AUMA1 | Infineon Tec... | 1.16 $ | 1000 | MOSFET N-CH 4VSONN-Channe... |
| IPL65R195C7AUMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 4VSONN-Channe... |
| IPL60R285P7AUMA1 | Infineon Tec... | 0.9 $ | 3000 | MOSFET N-CH 600V 4VSONN-C... |
| IPL60R1K5C6SATMA1 | Infineon Tec... | 0.32 $ | 1000 | MOSFET N-CH 8TSONN-Channe... |
| IPL60R085P7AUMA1 | Infineon Tec... | 2.56 $ | 1000 | MOSFET N-CH 4VSONN-Channe... |
| IPL65R340CFDAUMA1 | Infineon Tec... | 0.92 $ | 1000 | MOSFET N-CH 4VSONN-Channe... |
| IPL65R165CFDAUMA1 | Infineon Tec... | 1.5 $ | 1000 | MOSFET N-CH 4VSONN-Channe... |
| IPL60R365P7AUMA1 | Infineon Tec... | 0.77 $ | 3000 | MOSFET N-CH 650V 10A VSON... |
| IPL65R1K5C6SATMA1 | Infineon Tec... | 0.35 $ | 1000 | MOSFET N-CH 8TSONN-Channe... |
| IPL65R099C7AUMA1 | Infineon Tec... | 2.28 $ | 1000 | MOSFET N-CH 4VSONN-Channe... |
| IPL65R130C7AUMA1 | Infineon Tec... | 1.82 $ | 1000 | MOSFET N-CH 650V 15A 4VSO... |
| IPL65R650C6SATMA1 | Infineon Tec... | 0.53 $ | 1000 | MOSFET N-CH 8TSONN-Channe... |
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| IPL60R075CFD7AUMA1 | Infineon Tec... | 2.74 $ | 1000 | MOSFET N-CH 4VSONN-Channe... |
| IPL65R660E6AUMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 4VSONN-Channe... |
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IPL60R065C7AUMA1 Datasheet/PDF