IPL65R310E6AUMA1

Vgs(th) (Max) @ Id:	3.5V @ 400µA
Package / Case:	4-PowerTSFN
Supplier Device Package:	Thin-Pak (8x8)
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	104W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	950pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	45nC @ 10V
Series:	CoolMOS™ E6
Rds On (Max) @ Id, Vgs:	310 mOhm @ 4.4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	13.1A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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IPL65R310E6AUMA1 Application Field and Working Principle

The IPL65R310E6AUMA1 is a silicon N-Channel PowerTrench MOSFET designed to operate at voltages of 30V and currents of 20A. This makes it an ideal device for applications that require higher currents and low on-resistance in a small package size. Generally, the IPL65R310E6AUMA1 is extensively used in industry, automotive and other high power applications.The IPL65R310E6AUMA1 is a very popular N-Channel MOSFET as it offers specific features such as good thermal stability and fast switching speed, allowing for greater power efficiency. In addition, its PowerTrench construction provides for significant improvement in avalanche performances and overall safe operation by greatly reducing the internal thermal resistance.

Working Principle

The IPL65R310E6AUMA1 is a voltage-controlled, enhancement-mode MOSFET device. It is typically used in medium to high power switching applications. The working principle of the device is based on the principle that an electric field can be used to control the flow of electrons through a material. This electric field can typically be applied through either a gate or a drain terminal.The IPL65R310E6AUMA1 typically has three pins, such as source, gate and drain. When voltage is applied to the source pin, current will flow through the source and the drain terminal. This current depends on the voltage applied to the gate pin and the channel resistance between the source and the drain.A greater voltage applied to the gate terminal will increase the potential difference between the gate and the source, creating a lower channel resistance and allowing for higher current to flow through the drain. Conversely, when the gate voltage is reduced, the channel resistance increases, limiting the current through the drain. This makes the device an ideal choice for applications such as power control, motor control and switching between two power sources.

Conclusion

The IPL65R310E6AUMA1 offers many advantages such as great thermal stability, low on-resistance and fast switching speeds, making it a popular choice among designers and engineers of high power applications. It is typically used in the automotive industry, industrial applications and other power sensitive applications. The device works on a simple principle based on the fact that an electric field can be used to control the flow of electrons through a material, making it an ideal choice for applications that require precise power control.

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