
Allicdata Part #: | IPL60R125P7AUMA1TR-ND |
Manufacturer Part#: |
IPL60R125P7AUMA1 |
Price: | $ 1.55 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 4VSON |
More Detail: | N-Channel 650V 27A (Tc) 111W (Tc) Surface Mount PG... |
DataSheet: | ![]() |
Quantity: | 3000 |
3000 +: | $ 1.40404 |
Vgs(th) (Max) @ Id: | 4V @ 410µA |
Package / Case: | 4-PowerTSFN |
Supplier Device Package: | PG-VSON-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 111W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1544pF @ 400V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
Series: | CoolMOS™ P7 |
Rds On (Max) @ Id, Vgs: | 125 mOhm @ 8.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 27A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IPL60R125P7AUMA1, a insulated gate p-channel MOSFET, is widely used in many electronics applications. As a versatile component, it can be used to construct logic circuits, support the driving of high-frequency signals, regulate power supply, modulate sound and light to create effects, and for a wide range of other applications. The IPL60R125P7AUMA1 is known for its low on-state resistance, low gate and drain-source capacitance, and fast response time.
The IPL60R125P7AUMA1 is a single MOSFET device, one of the most commonly used transistor types. MOSFET stands for metal-oxide semiconductor field-effect transistor, which uses a gate electrode to control an electrical field between the source and the drain terminals. The MOSFET channel is composed of an oxide layer between the source and the drain which acts as an insulator. When a positive voltage is applied to the gate, the oxide layer induces an electrical field which causes electrons to flow through the channel, allowing current to flow from the source to the drain. When the voltage is removed from the gate, the oxide layer returns to its original state, preventing current from flowing and turning the device off.
Using these devices, engineers can create and control low-voltage and low-power circuits and systems. For example, a MOSFET can be used to drive a multiplexer circuit, which allows a single digital signal to control multiple outputs. MOSFETs can also be used to drive high-frequency signals, such as those found in radio receivers and transmitters. With its high frequency response time, the IPL60R125P7AUMA1 can be used to effectively modulate sound and light, creating special effects in LEDs. Strategies such as pulse-width modulation, soft switching, and pulse amplitude modulation can also be implemented using MOSFETs. Because of its low on-state resistance, the IPL60R125P7AUMA1 can be used for motor control, allowing for accurate speed and torque control without generating too much heat.
MOSFETs are also widely used in power supply applications. Their low on-state resistance and gate capacitance make them ideal for regulating power supply signals, allowing for low signal noise and ripple levels. Furthermore, the fast switching time of the IPL60R125P7AUMA1 allows for efficient control of the power supply signal, reducing power consumption in the circuit. Additionally, MOSFETs can be employed as current limiters, protecting devices from over-current conditions. In its linear region, the MOSFET can be configured to limit the current flowing through a circuit to a predetermined value.
In conclusion, the IPL60R125P7AUMA1 is an ideal component for a variety of applications. Its low on-state resistance and gate capacitance make it a suitable device for use in logic circuits, radio receivers, and motors. With its fast response time and low signal noise characteristics, the IPL60R125P7AUMA1 is an effective component for modulating sound and light, regulating power supplies, and protecting circuits from over-current conditions.
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