IPL60R065P7AUMA1

Vgs(th) (Max) @ Id:	4V @ 800µA
Package / Case:	4-PowerTSFN
Supplier Device Package:	PG-VSON-4
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	201W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2895pF @ 400V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	67nC @ 10V
Series:	CoolMOS™ P7
Rds On (Max) @ Id, Vgs:	65 mOhm @ 15.9A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	41A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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<p>The IPL60R065P7AUMA1 is a Power MOSFET from NXP that is suitable for applications such as the switching and the protection of all types of power circuits, such as switching power supplies, UPSs, servers, motor drives and topologies. It is based on the same advanced process technology as many other contemporary Power MOSFETs, delivering superior performance with low gate charge and low switching losses.</p><p>The IPL60R065P7AUMA1 is a single N-channel enhancement mode Power MOSFET, with a maximum drain-source voltage of 60 V. It features very low RDS(on) (drain-source resistance), NXP\'s patented X-technology, resulting in a low threshold drain-source voltage and other advanced features. Its programmable avalanche energy is also very high, making it suitable for a wide range of applications.</p><p>This MOSFET also has a very low on-state resistance, making it very efficient in terms of power consumption. It has an extended upper temperature range and it is capable of continuous high current operation in an ambient temperature range of -55 to 150° C. This makes it ideal for use in automotive applications where high thermal stability is required.</p><p>The IPL60R065P7AUMA1 has an enhanced drain-source breakdown voltage of 600 V, which provides improved device ruggedness and surge capability. It also has an ultra low gate oxide charge of 1.9 nC that minimizes switching losses, resulting in higher power conversion efficiency.</p><p>The IPL60R065P7AUMA1 features a very low RDS(on) of just 6.5 mΩ at 25° C, and 5 mΩ at 100° C. This low on-state resistance values make the parts suitable for a wide range of switching and protection applications. It also has an extended upper temperature range and is capable of continuous high current operation in an ambient temperature range of -55 to 150° C.</p><p> The device also features a gate-source ESD protection of 8000 V HBM, making it extremely reliable in demanding applications. It features a variety of packages, including TO-220, SMD and TO-247, making it suitable for a wide range of applications. It is designed for easy mounting and minimal solder joint cracking.</p><p>The IPL60R065P7AUMA1 is ideal for many applications, especially those where minimal energy consumption is required, such as automotive applications and telecom solutions. It is also suitable for use in a wide variety of switching power supplies, servers and UPSs.</p><p>The working principle of the IPL60R065P7AUMA1 is based on the current flow between the drain and the source, controlled by the voltage applied to the gate-source. When the gate-source voltage is above the threshold voltage (VGS), current will start to flow between the drain and the source terminals. The amount of current that can be controlled is limited by the amount of voltage, known as the "gate-source" voltage. Generally, the higher the gate-source voltage, the higher the current capacity, and therefore the higher the power that can be handled.</p><p>The IPL60R065P7AUMA1 is a highly reliable, efficient and durable MOSFET, capable of a wide range of applications. It has an extended upper temperature range and low on-state resistance, making it ideal for switching and protection applications. With its high surge capability, low gate charge and low switching losses, the device is suitable for a variety of telecom and automotive applications.</p>

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