IPL60R360P6SATMA1

Vgs(th) (Max) @ Id:	4.5V @ 370µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-ThinPak (5x6)
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	89.3W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1010pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	22nC @ 10V
Series:	CoolMOS™ P6
Rds On (Max) @ Id, Vgs:	360 mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	11.3A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IPL60R360P6SATMA1 Application Field and Working Principle

The IPL60R360P6SATMA1 is an isolated gate power MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is a single MOSFET used for high voltage and high side switching applications.There are many applications in which the IPL60R360P6SATMA1 can be used. It is commonly used in switched mode power supplies, DC/DC converters, or any application with a load current up to 60A. It is also suitable for applications in industrial and automotive equipment, wind and solar power systems, and telecom power systems.The working principle of the IPL60R360P6SATMA1 is relatively simple. It consists of a metal oxide semiconductor (MOS) structure between two electrodes, the drain and the source. When a low voltage is applied to the gate electrode, it attracts mobile electrons which then pass through the MOS layer, resulting in an increase of conductivity between the drain and the source. This increase in conductivity results in the device turning on, allowing a current to flow between the drain and the source. When the gate voltage is removed, the electrons are repelled, resulting in the device turning off.The MOS structure between the electrodes is what makes the IPL60R360P6SATMA1 unique. It has an isolation layer which prevents current from flowing between the source and the gate, thus improving the safety of the device and protect the user from electric shock. This also results in the device being able to handle very high voltage and current levels.The IPL60R360P6SATMA1 also has an integrated temperature monitoring circuit with an adjustable thermal shutdown temperature, allowing the device to automatically shut down when the device heats up. This is useful in applications where the current levels are constantly changing, as the device can protect itself from overheating.Moreover, the IPL60R360P6SATMA1 is designed to be compatible with wave-soldering processes, which makes it an ideal choice for through-hole applications. It also has a low profile package, ensuring it is suitable for applications where space is limited.In conclusion, the IPL60R360P6SATMA1 is a high-performance, high-voltage, single MOSFET that is suitable for a variety of applications, from industrial and automotive equipment to DC/DC converters. Its unique MOS structure and integrated temperature monitoring circuit allows it to provide high levels of protection and reliability, while its low profile package ensures it is suitable for even the most limited of spaces.

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