| Allicdata Part #: | IPL65R650C6SATMA1-ND |
| Manufacturer Part#: |
IPL65R650C6SATMA1 |
| Price: | $ 0.53 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 8TSON |
| More Detail: | N-Channel 650V 6.7A (Tc) 56.8W (Tc) Surface Mount ... |
| DataSheet: | IPL65R650C6SATMA1 Datasheet/PDF |
| Quantity: | 1000 |
| 5000 +: | $ 0.46965 |
| Vgs(th) (Max) @ Id: | 3.5V @ 210µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | Thin-PAK (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 56.8W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 440pF @ 100V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
| Series: | CoolMOS™ C6 |
| Rds On (Max) @ Id, Vgs: | 650 mOhm @ 2.1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6.7A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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An IPL65R650C6SATMA1 is a discrete N-MOSFET products in the family of Field Effect Transistors (FETs), more specifically a Single MOSFET. It is available in through-hole P-Cell package, offering a low on-resistance of 650 mOhm. It is a very common component used for implementing high-frequency switching in power applications.
IPL65R650C6SATMA1 has a variety of applications in industry and consumer products. It can be used for various DC power switch applications, such as switch mode power supplies, motor drives, solar inverters and converters, as well as in battery chargers and other DC to DC conversion applications. It can also be used for audio amplifiers, RF mixer and RF power amplifying circuits. In addition, IPL65R650C6SATMA1 can be used as a component in communication systems, network switching systems, high-speed data processing equipment and high-speed switching circuits.
At the heart of the IPL65R650C6SATMA1 lies its working principle. This FET can be thought of as a three-terminal device, with two terminals (Gate and Source) used for controlling the current flow, and one terminal (Drain) used for passing the current. The Gate terminal is used to control the current flow between the Source and Drain terminals. As the Gate terminal is connected to a voltage source, it can be used to control the conductance between the Source and Drain terminals. The voltage applied to the Gate terminal can be either positive or negative, depending on the application. When the voltage is positive, it allows current to flow between the Source and Drain terminals; when the voltage is negative, it prohibits current from flowing. This process is known as Depletion Modulation.
The IPL65R650C6SATMA1 is a logic component with a wide range of applications in industry and consumer products. Its use depends on the user’s requirements and needs. Its most frequent use is in the power switch applications, where it is used to control current flow. Its working principle of Depletion Modulation allows it to be used in a variety of circuits and systems, demonstrating its versatility.
The specific data is subject to PDF, and the above content is for reference
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IPL65R650C6SATMA1 Datasheet/PDF