IPL60R104C7AUMA1

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The IPL60R104C7AUMA1 is a N-Channel Enhancement Mode Field-Effect Transistor (FET). It is available in a single package and offers performances that are suitable for a wide range of applications, from high-speed logic-level switching to low-side load switching. The N-channel FETs utilize a 3-terminal design and use an ion-implant process to improve on-state characteristics and reduce the body-drain capacitance. The IPL60R104C7AUMA1 has a maximum drain current of 60 amperes and a breakdown voltage of 75 volts.

The IPL60R104C7AUMA1 has an on-state resistance of 0.04 ohms, making it ideal for high-current switching applications. In addition, the device offers high slew rate and fast response time, making it well suited for applications where fast on/off switching is required. The device also has a large gate-source voltage range, allowing it to be used in applications where a wide range of gate voltages needs to be supported.

The working principle of the IPL60R104C7AUMA1 is based on the field-effect transistor. A FET is a specialized type of transistor where the current through the device is controlled by an electric field created by a voltage applied to a gate terminal. In an N-Channel FET, current flows from the drain to the source terminal when the gate voltage exceeds a certain threshold. The greater the gate voltage, the higher the drain current. The drain current can be controlled by varying the gate voltage, making it ideal for switching applications.

The IPL60R104C7AUMA1 is well suited for a wide range of applications, from switching high-current loads to controlling logic levels. It is commonly used in industrial control, motor control and power supply applications where fast switching with low on-state resistance is required. The device can also be used in power management circuits, such as switching regulators and battery protection circuits, as well as in automotive applications.

In conclusion, the IPL60R104C7AUMA1 is a single package N-Channel Enhancement Mode Field-Effect Transistor that offers a wide range of features and performance characteristics, making it well suited for a variety of switching, logic-level switching and load switching applications. The device is easy to use and is capable of handling high currents with low on-state resistance, making it ideal for switching applications.

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