
Allicdata Part #: | IPL60R105P7AUMA1TR-ND |
Manufacturer Part#: |
IPL60R105P7AUMA1 |
Price: | $ 2.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 4VSON |
More Detail: | N-Channel 650V 33A (Tc) 137W (Tc) Surface Mount PG... |
DataSheet: | ![]() |
Quantity: | 3000 |
3000 +: | $ 1.81434 |
Vgs(th) (Max) @ Id: | 4V @ 530µA |
Package / Case: | 4-PowerTSFN |
Supplier Device Package: | PG-VSON-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 137W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1952pF @ 400V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Series: | CoolMOS™ P7 |
Rds On (Max) @ Id, Vgs: | 105 mOhm @ 10.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 33A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IPL60R105P7AUMA1 is a type of transistor known as an insulated gate bipolar transistor or IGBT. This device belongs to the field of power electronics and is used in a variety of applications. Such transistors are popular for their superior efficiency, ruggedness, and reliability in comparison to other types of transistors. The IGBT is used in a variety of applications including power conversion and switching, motor control, inverters, and power supplies, and appliance controls.
The IPL60R105P7AUMA1 IGBT is a single Dielectric Isolation (DI) IGBT packaged in a PowerDI 6F package. It is designed for high power and high speed applications. This type of device is typically used in DC-DC converters, AC motor drives, HVAC/R variable speed motor drives, UPS systems, and variable-harmonics-performance inverters. It is also suitable for applications such as communications, motor control, solar power systems, mobile power supplies, and uninterruptible power supply systems.
In terms of its principles of operation, the IPL60R105P7AUMA1 has a structure that is similar to that of a MOSFET. It is composed of a gate and a substrate (body). This gate forms a semiconductor channel between the gate and the substrate, which allows current to flow between them. The voltage applied to the gate controls the size of the channel and thus the amount of current flow from the gate to the substrate. As the voltage applied to the gate increases, the channel expands and allows for more current flow.
The IPL60R105P7AUMA1 IGBT has an integrated reverse body diode that helps protect the device from reverse current, static electricity, and transients. Moreover, it has an integrated Avalanche Rugged Technology that helps prevent early breakdown due to switching energy and energy losses. This feature also helps ensure high reliability and efficiency in operation. Furthermore, the IGBT has a high input impedance, which helps to reduce power dissipation. Finally, the device has a soft NTC feature, which helps to limit overcurrent protection.
The IPL60R105P7AUMA1 IGBT is a highly efficient and reliable device that is suitable for a wide range of applications. Its integrated features such as reverse body diode and Avalanche Rugged Technology help provide added levels of safety, efficiency, and reliability. The device’s high input impedance and soft NTC features help to reduce power dissipation, while its ability to handle high temperatures and high switching speeds make it an ideal choice for a variety of applications. Its use in power conversion, switching, motor control, inverters, and power supplies, as well as its ability to be used in communications, motor control, solar power systems, mobile power supplies, and uninterruptible power supply systems make it a suitable choice for a wide variety of applications.
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