IPL60R1K5C6SATMA1

Vgs(th) (Max) @ Id:	3.5V @ 90µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	Thin-PAK (5x6)
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	26.6W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	200pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	9.4nC @ 10V
Series:	CoolMOS™ C6
Rds On (Max) @ Id, Vgs:	1.5 Ohm @ 1.1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	3A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The IPL60R1K5C6SATMA1 is one type of field effect transistor (FET) used to regulate current in electronics devices. The "IPL" prefix indicates the device\'s extended range capability, meaning it can operate at temperatures in the -40º to 125º Celsius range without suffering from device degradation. The "C6S" suffix indicates the device is a single-gate enhancement mode MOSFET, which means it is capable of providing a very high current and very low on-resistance.The IPL60R1K5C6SATMA1 is typically used as a switch or amplifier in various electronic circuits, but can also be used for voltage regulation, power supply control, motor and load control, analog signal processing, and other circuit control functions. As a switch, the device can be used to control the flow of current in a circuit, allowing an input voltage to be connected to an output voltage, resulting in the ability to control, regulate, or amplify signals. The working principle of an IPL60R1K5C6SATMA1 FET is based on the principle of gate current. When a voltage is applied to its gate terminal, current flows through the gate to the source terminal. This gate current triggers an underlying electric field that crosses through the drain terminal, resulting in a current flow from source to drain. This is known as "channel conductance" and is used in power electronics devices to regulate voltage and current.The IPL60R1K5C6SATMA1 is an enhancement mode device, meaning it requires a gate-to-source voltage higher than the device threshold to activate the channel and allow current to flow. This device threshold is typically between four and five volts, but can vary significantly depending on the temperature of the device and other environmental conditions. The device is also equipped with a number of features that make it ideal for use in power electronics applications. For example, the IPL60R1K5C6SATMA1 has a very fast switching speed of 200 picoseconds, allowing it to quickly switch between low and high states, reducing power dissipation and increasing the efficiency of the device. Additionally, the device’s low threshold voltage makes it ideal for use in low-voltage circuits. IThe IPL60R1K5C6SATMA1 also features built-in electrostatic discharge (ESD) protection up to 8 kilosvolts and built-in temperature sensing and over temperature protection, making it well-suited for use in high-temperature environments.Overall, the IPL60R1K5C6SATMA1 is a versatile and highly efficient field effect transistor that is well-suited for use in a wide range of applications. Its extended temperature range and built-in protection features enable it to operate reliably in harsh conditions and give it a longer service life. The device’s fast switching speed combined with its low threshold voltage makes it suitable for use in low-voltage applications, while its low on-resistance and high current capability make it ideal for controlling and regulating larger loads.

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