IPL60R085P7AUMA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPL60R085P7AUMA1 is a single P-channel enhancement-mode Mach-O-Vision field effect transistor. The FET is rated for V_{ds max} = 60V and a maximum continuous drain source current of 5A. It is equipped with a built-in temperature protecting circuit and a low on-resistance of up to 0.35Ω to ensure a highly reliable operation. It has been designed for a wide variety of industrial and medical applications, such as motor controllers, battery management systems, and other power regulating systems.

Applications of the IPL60R085P7AUMA1

The IPL60R085P7AUMA1 is a great choice for a wide range of industrial and medical applications, especially in those that require efficient power conversion. Some of the more common applications include:

• Motor controllers
• Battery management systems
• Power converters and regulators
• Power adapters
• Solar power converter/charge controller
• Motor gate drives
• Digital power supply controllers
• LED lighting and lighting controllers

The FET can also be used for portable consumer electronics devices, such as mobile phones, digital cameras, and tablet computer devices.

Working Principle of the IPL60R085P7AUMA1

The working principle of the IPL60R085P7AUMA1 is that of a voltage-regulated FET, also known as a MOSFET. The FET operates by having a source-gate voltage applied to it, which then controls a drain-source current. When the voltage between the source and gate is raised, the electrons that travel through the drain-source channel increase. This increase in current allows more power to be delivered to the load. When the source-gate voltage is lowered, the amount of current that can flow through the drain-source channel is reduced, reducing the power output.

The IPL60R085P7AUMA1 has a built-in temperature protection circuit which allows for a safe shutdown when the FET gets too hot. It also features a low on-resistance of up to 0.35Ω, which helps to reduce power loss and improve efficiency. Additionally, the FET has a wide V_{ds max} range of up to 60V, allowing for a wide range of applications.

Conclusion

The IPL60R085P7AUMA1 is a P-channel enhancement-mode MOSFET that is ideal for a wide range of power-regulating applications. It provides efficient power conversion while also featuring a built-in temperature protection circuit and a low on-resistance of up to 0.35Ω. The FET has a wide V_{ds max} range of up to 60V, providing flexibility in applications. With its robust performance and reliability, the IPL60R085P7AUMA1 is a great choice for a variety of industrial and medical applications.

The specific data is subject to PDF, and the above content is for reference