IPL60R285P7AUMA1

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The IPL60R285P7AUMA1 is a single n-channel logic level enhancement-mode field effect transistor (FET) produced using Nexperia’s advanced low voltage process. It is best suited for portable and low power applications as it integrates both ultra-low on resistance and low gate-charge characteristics. The device is highly reliable and flexible, making it suitable for a variety of applications. This article will discuss the application field and working principle of the IPL60R285P7AUMA1.

Applications of the IPL60R285P7AUMA1

The IPL60R285P7AUMA1 features a maximum drain-source voltage of 28V, maximum drain current of 11A, and total gate-charge (Qg) of 22nC, making it an excellent choice for a wide range of applications. Its low on-resistance and low gate-charge make it especially suitable for low power switching applications. The device can be used in circuit designs such as motor drivers, overload protection, speakers, DC-DC converters, motor protection, internal voltage references, and backlighting.

The IPL60R285P7AUMA1 is also suitable for low voltage power management in automotive, industrial, telecom, and consumer electronics applications, such as voltage regulation, DC-DC conversion, load switching, battery management, display backlighting, and automotive interruption control. Additionally, it is also used in power converter applications such as laptop chargers, USB chargers, and adapter chargers.

Working Principle of the IPL60R285P7AUMA1

The IPL60R285P7AUMA1 is an enhancement-mode FET, which means that it is normally off. When a positive voltage is applied to the gate, the device is switched on and current begins to flow through the channel. As the gate voltage is increased, the drain current also increases, up to the maximum rated current of 11A. When the gate voltage is removed, the device switches off and the drain current stops flowing. This switching behavior can be used to control the current in a circuit.

The IPL60R285P7AUMA1 also features a low gate-charge, which makes it suitable for low power applications. Low gate-charge means that the FET requires less power to control it, which makes it more efficient. Additionally, it is ideal for fast switching applications thanks to its ultra-low on-resistance, which allows for low s-on times and fast switching speeds.

Conclusion

The IPL60R285P7AUMA1 is an excellent choice for a wide range of applications due to its low on-resistance, low gate-charge, and wide operating voltage range. It is suitable for low power switching applications, as well as power management in automotive, industrial, telecom, and consumer electronics applications. Additionally, it is ideal for fast switching applications thanks to its ultra-low on-resistance and low gate-charge.

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