IPL60R2K1C6SATMA1 Allicdata Electronics
Allicdata Part #:

IPL60R2K1C6SATMA1-ND

Manufacturer Part#:

IPL60R2K1C6SATMA1

Price: $ 0.27
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 8TSON
More Detail: N-Channel 600V 2.3A (Tc) 21.6W (Tc) Surface Mount ...
DataSheet: IPL60R2K1C6SATMA1 datasheetIPL60R2K1C6SATMA1 Datasheet/PDF
Quantity: 1000
5000 +: $ 0.24591
Stock 1000Can Ship Immediately
$ 0.27
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Package / Case: 8-PowerTDFN
Supplier Device Package: Thin-PAK (5x6)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 21.6W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Series: CoolMOS™ C6
Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 760mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Tape & Reel (TR) 
Description

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IPL60R2K1C6SATMA1 is an IGBT module, also known as an Insulated Gate Bipolar Transistor module. This module is a component which is commonly used in switching power supplies, inverters, motor control, heating systems and other applications that require power conversion.

IGBTs are a type of transistor that is used for power and voltage conversion applications. They have the advantage of being able to handle higher voltages without generating a lot of heat, which makes them ideal for switching power supplies. The main difference between an IGBT and a traditional power transistor is that an IGBT contains an insulated gate that is connected to the source and the drain. This gate serves to control the current flow between the two points, which allows it to be used for power conversion purposes.

The main components of the IPL60R2K1C6SATMA1 are the IGBT, a diode and a resistor. The IGBT is designed to allow current to flow between the source and the drain. The diode is used to protect the IGBT from reverse voltage and to allow current to flow in the opposite direction. The resistor is used to control the gate voltage and to prevent any overvoltage.

The working principle of the IPL60R2K1C6SATMA1 is straightforward. When a voltage is applied to the gate of the IGBT, the gate voltage is modulated so that current can flow between the drain and the source. The current flows through the diode, which prevents any reverse voltage from damaging the IGBT. The resistor is then connected to the gate so that the current flow can be limited.

The IPL60R2K1C6SATMA1 is used in numerous applications. It is often used in switching power supplies, inverters, motor control and heating systems. It is also used in many other applications that require power conversion, such as solar and wind power systems. In these applications, the IGBT allows the converter to switch between different voltage levels with minimal heat generation.

The IPL60R2K1C6SATMA1 is a powerful and reliable component for power conversion applications. It is strong enough to handle high voltages without generating a lot of heat, making it a popular choice for many applications. Additionally, its simple working principle makes it easy to use, making it a great option for those who are just getting started in power conversion.

The specific data is subject to PDF, and the above content is for reference

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