
Allicdata Part #: | IPL60R185CFD7AUMA1TR-ND |
Manufacturer Part#: |
IPL60R185CFD7AUMA1 |
Price: | $ 1.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 4VSON |
More Detail: | N-Channel 650V 14A (Tc) 85W (Tc) Surface Mount PG-... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 1.04780 |
Vgs(th) (Max) @ Id: | 4.5V @ 300µA |
Package / Case: | 4-PowerTSFN |
Supplier Device Package: | PG-VSON-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 85W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1199pF @ 400V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
Series: | CoolMOS™ CFD7 |
Rds On (Max) @ Id, Vgs: | 185 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IPL60R185CFD7AUMA1 FET is a power transistor specifically designed for use in high power applications. It is a single-gate, unipolar FET which is capable of handling up to 60A of continuous current and can be used in applications up to 80V.
The IPL60R185CFD7AUMA1 is built upon a silicon substrate and features a MOSFET structure. Incoming signals are received by its gate, which then determines the conductivity of the device. As the gate’s voltage is increased, the conductivity of the channel underneath the gate increases as well, allowing higher levels of current to flow. As the gate voltage is decreased, the channel’s conductivity also decreases and the current flow is reduced.
This power transistor is ideally suited for switching and power conversion applications, where high efficiency and low on-state resistance is required. It can also be used in other applications such as DC-DC converters, AC current limiters, power amplifiers, and motor control circuits. Additionally, its inherently low on-state resistance makes it suitable for applications where a high frequency switching device with fast turn on/off times is desired.
The IPL60R185CFD7AUMA1 also features a low gate threshold voltage (Vgs ≤ 2V), which enabled it to operate at very low switching frequencies and is unusual for a power FET. This allows for increased efficiency in applications where the switching frequency is relatively low compared to the power level and the total switching time of the device is a significant factor. This makes the device especially suitable for low voltage and high current switching applications, which are becoming increasingly popular thanks to their increasing efficiency.
Furthermore, the device’s high maximum junction temperature rating (175°C) makes it suitable for high power consumer and industrial applications, where the power dissipation of the device needs to be moderately high. At higher temperatures, the device is also able to sustain higher frequencies and thus it can be used in applications that may require high switching speeds.
The IPL60R185CFD7AUMA1 is a great choice for many different applications, as it combines the benefits of high power and low operational costs. Its low power loss, high circuit efficiency, and low on-state resistance make it a suitable choice for many power applications, while its high maximum junction temperature allows it to easily maintain optimal thermal performance. Additionally, its low gate threshold voltage enables it to be used for low voltage and high frequency applications, making it a great choice for high current and low voltage applications.
The specific data is subject to PDF, and the above content is for reference
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