IPL65R165CFDAUMA1 Allicdata Electronics
Allicdata Part #:

IPL65R165CFDAUMA1-ND

Manufacturer Part#:

IPL65R165CFDAUMA1

Price: $ 1.50
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 4VSON
More Detail: N-Channel 650V 21.3A (Tc) 195W (Tc) Surface Mount ...
DataSheet: IPL65R165CFDAUMA1 datasheetIPL65R165CFDAUMA1 Datasheet/PDF
Quantity: 1000
3000 +: $ 1.34950
Stock 1000Can Ship Immediately
$ 1.5
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Package / Case: 4-PowerTSFN
Supplier Device Package: PG-VSON-4
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 195W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 165 mOhm @ 9.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21.3A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IPL65R165CFDAUMA1 is a field-effect transistor (FET) that belongs to a type of transistors called metal-oxide-semiconductor field-effect transistors (MOSFETs). It is single-channeled and can be used to switch and amplify signals.

Field-effect transistors typically use two terminals for controlling current flow through it. The IPL65R165CFDAUMA1, like other MOSFETs, has the added advantage of being able to control the current flow with voltage.

This device has a drain terminal, gate terminal, and a source terminal. The main function of the drain terminal is to provide the exit or destination for the current and the source terminal is responsible for providing the entry or source of the current. The main purpose of the gate terminal is to control or modulate the current between the drain and the source terminal.

The source and the drain of the IPL65R165CFDAUMNA1 is connected through a thin layer of metal oxide (MOS). The layer forms an insulator for the current flow, which is why it is also known as an insulated-gate FET.

The gate terminal of the MOSFET is connected to the metal oxide layer. When the voltage at the gate terminal is increased, it enhances the electric field, which also affects the electric fields present in the metal oxide layer. This causes the current flowing through the source and drain to increase, resulting in a higher conductance. Similarly, when the voltage is reduced, the current flowing through the source and drain decreases, resulting in a lower conductance.

The IPL65R165CFDAUMA1 is mainly used in switching and amplifying applications. Because of its high input-output resistance, it is often used as a switch. Since it can provide both high and low level of conduction, it can be effectively used for amplifying applications as well.

The IPL65R165CFDAUMA1 is a versatile FET that is able to handle a wide variety of applications. It is durable and can be used in both digital and analog applications. It is also able to handle high voltage and high frequency, making it a great choice for many different applications.

The specific data is subject to PDF, and the above content is for reference

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