
Allicdata Part #: | IPL65R165CFDAUMA1-ND |
Manufacturer Part#: |
IPL65R165CFDAUMA1 |
Price: | $ 1.50 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 4VSON |
More Detail: | N-Channel 650V 21.3A (Tc) 195W (Tc) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 1.34950 |
Vgs(th) (Max) @ Id: | 4.5V @ 900µA |
Package / Case: | 4-PowerTSFN |
Supplier Device Package: | PG-VSON-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 195W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2340pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 86nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 165 mOhm @ 9.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 21.3A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IPL65R165CFDAUMA1 is a field-effect transistor (FET) that belongs to a type of transistors called metal-oxide-semiconductor field-effect transistors (MOSFETs). It is single-channeled and can be used to switch and amplify signals.
Field-effect transistors typically use two terminals for controlling current flow through it. The IPL65R165CFDAUMA1, like other MOSFETs, has the added advantage of being able to control the current flow with voltage.
This device has a drain terminal, gate terminal, and a source terminal. The main function of the drain terminal is to provide the exit or destination for the current and the source terminal is responsible for providing the entry or source of the current. The main purpose of the gate terminal is to control or modulate the current between the drain and the source terminal.
The source and the drain of the IPL65R165CFDAUMNA1 is connected through a thin layer of metal oxide (MOS). The layer forms an insulator for the current flow, which is why it is also known as an insulated-gate FET.
The gate terminal of the MOSFET is connected to the metal oxide layer. When the voltage at the gate terminal is increased, it enhances the electric field, which also affects the electric fields present in the metal oxide layer. This causes the current flowing through the source and drain to increase, resulting in a higher conductance. Similarly, when the voltage is reduced, the current flowing through the source and drain decreases, resulting in a lower conductance.
The IPL65R165CFDAUMA1 is mainly used in switching and amplifying applications. Because of its high input-output resistance, it is often used as a switch. Since it can provide both high and low level of conduction, it can be effectively used for amplifying applications as well.
The IPL65R165CFDAUMA1 is a versatile FET that is able to handle a wide variety of applications. It is durable and can be used in both digital and analog applications. It is also able to handle high voltage and high frequency, making it a great choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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