IPL60R650P6SATMA1

The IPL60R650P6SATMA1 is a single N-channel enhancement mode power MOSFET developed for commercial and industrial applications. It is designed for switching and amplifier applications with minimum or zero voltage gate drive. This device is especially suitable for fast switching modes such as frequency switching circuits because of its high frequency operating capability.

The IPL60R650P6SATMA1 application field includes general DC and switch mode power supplies, converters, self-powered and hot-swap controllers, and high-speed power switching circuits. It is also suitable for fast switching applications such as Frequency Switching Circuits and Power Amplifier Applications.

The working principle of this device is based on the use of metal–oxide–semiconductor (MOS) technology. This technology uses metal–oxide to design transistors and capacitors on a semiconductor. The metal–oxide is formed on the surface of the semiconductor and acts as a gate to control the current flow. The gate receives a voltage, which turns on or off the current flow.

The IPL60R650P6SATMA1 is composed of a single N-channel enhancement mode power MOSFET. This device is built with a latch-up safe feature, which prevents device latch-up due to negative gate to source voltage. It also provides an extremely low gate charge and efficient switching charge transfer due to the low RDS(on).

This device offers high speed switching and low gate charge, as well as low on-resistance and high peak current capability. It also provides a safe operating area and can withstand higher temperatures due to its temperature compensation feature. The IPL60R650P6SATMA1 has an active SOA (Safe Operating Area) with a typical peak current (Ip) of 6.5A and a typical drain to source on-state resistance (RDS(on)) of 0.15 Ω.

The IPL60R650P6SATMA1 offers superior performance in terms of switching speed and efficiency due to its low gate charge and low RDS(on). It is ideal for high frequency applications and also has a low threshold voltage and low reverse transfer capacitance. This device is also suited for high temperature applications due to its high thermal stability.

The IPL60R650P6SATMA1 device belongs to the FETs, MOSFETs, Single category. It is a well-designed device that offers superior performance with its low gate charge, low RDS(on), and a safe operating area. This device is suitable for many applications and is ideal for high frequency switching and amplifier applications.