IPP100N04S204AKSA1 Allicdata Electronics
Allicdata Part #:

IPP100N04S204AKSA1-ND

Manufacturer Part#:

IPP100N04S204AKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 100A TO220-3
More Detail: N-Channel 40V 100A (Tc) 300W (Tc) Through Hole PG-...
DataSheet: IPP100N04S204AKSA1 datasheetIPP100N04S204AKSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 172nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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IPP100N04S204AKSA1 Application Field and Working Principle

The IPP100N04S204AKSA1 is a power MOSFET transistor device from Infineon specifically designed for use in power conversion applications. This device is capable of delivering up to 100 amps of continuous current, making it ideal for use in switch-mode power supplies and motor control. It features a 200V drain-source breakdown voltage, a 41.7mohm on-resistance, and an integrated fast body diode.

As a power MOSFET, the IPP100N04S204AKSA1 is a field effect transistor device, specifically a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). It works by using voltage applied to an insulated gate to control the flow of current through a drain to source channel, allowing it to effectively switch large amounts of power on and off with very low levels of heat generation. This type of transistor is the most commonly used in switch-mode power supplies, due to its high level of efficiency.

The IPP100N04S204AKSA1 can be used in a variety of applications, such as switch-mode power supplies, motor inverters, and motor control devices. Other applications the device is suitable for include lighting control systems, inductive load switching, power supply circuits, and lighting control systems.

The device features a superior RDS(on) compared to other MOSFET transistors, as well as a wide range of operating voltages from 5V to 200V. It also features an integrated fast body diode, making it ideal for use in switch-mode power supplies where fast switching is required. The transistor is also compatible with a variety of logic levels, making it ideal for use in a variety of digital applications.

In terms of the device’s working principle, the IPP100N04S204AKSA1 is a voltage-controlled device, meaning that the amount of current flowing through the device is controlled by the voltage applied to its gate. By changing the voltage applied to the gate, the amount of current flowing through the channel can be varied, allowing the device to be used in applications such as switch-mode power supplies and motor control. The device also features a fast body diode, allowing it to quickly recover from switching transients.

In conclusion, the IPP100N04S204AKSA1 is a power MOSFET transistor device from Infineon designed for use in switch-mode power supplies and motor control applications. It features a 200V drain-source breakdown voltage, a 41.7mohm on-resistance, and an integrated fast body diode. The device works by using voltage applied to an insulated gate to control the flow of current through a drain to source channel, allowing it to effectively switch large amounts of power on and off with very low levels of heat generation.

The specific data is subject to PDF, and the above content is for reference

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