Allicdata Part #: | IPP14N03LAIN-ND |
Manufacturer Part#: |
IPP14N03LA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 25V 30A TO-220AB |
More Detail: | N-Channel 25V 30A (Tc) 46W (Tc) Through Hole PG-TO... |
DataSheet: | IPP14N03LA Datasheet/PDF |
Quantity: | 1000 |
Series: | OptiMOS™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 13.9 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 20µA |
Gate Charge (Qg) (Max) @ Vgs: | 8.3nC @ 5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1043pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 46W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO-220-3 |
Package / Case: | TO-220-3 |
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The IPP14N03LA, a field effect transistor commonly known as a MOSFET (metal–oxide–semiconductor field-effect transistor), is a single voltage-controlled device that is used in many electronic circuits and systems. The MOSFET can be used in digital and analog circuits, and it is usually the choice for logic-level switching as it has high switching speeds and low noise. This article will explain the characteristics of the IPP14N03LA in terms of its application field, its working principle and the advantages of using it.
Application Field
The application fields of the IPP14N03LA are varied and wide ranging, but it is mostly used in low-signal circuits. As the device is low power, it can be used to control smaller currents without needing much power to drive the load. It can also be used in applications such as switching, amplifying and driving power transistors. It also works well in applications where low on-resistance is required, such as in motor control and switching applications.
Working Principle
The IPP14N03LA is a voltage-controlled device which means that its current flow is dependent on the voltage applied to the Gate terminal. To illustrate this, when applying a negative voltage to the Gate terminal, the current flow through the channel of the device turns off; when applying a positive voltage to the Gate terminal, the current flow turns on. This is known as enhancement-mode MOSFET, meaning that the current flow is increased by applying voltage. The amount of current that is flowing depends mostly on the size of the gate-oxide layer, which is calculated using the overlapping factors of the gate and the drain.
Advantages
The IPP14N03LA is a very useful device in many applications, as it offers some advantages over other types of transistors. Firstly, the on-resistance of the device is very low, which results in low power loss. This means that the device can be used in applications where power efficiency is important. Secondly, the device is able to switch high currents with low voltage levels, which makes it useful in digital circuits. Finally, the switching speeds are much higher than most other transistors, which is important in applications where speed is required.
Conclusion
The IPP14N03LA is a single MOSFET device that can be used in many applications. The device is often used in low-power circuits for switching, amplifying and driving power transistors. The device offers several advantages over other types of transistors, such as low on-resistance, high switching speeds and low voltage switching. These advantages make it popular for many applications.
The specific data is subject to PDF, and the above content is for reference
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