IPP100N06S3-04

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The IPP100N06S3-04 is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) that is specifically designed as a power switching device. It integrates a high cell density silicon-based insulated gate field-effect transistor to achieve high current flow and low on-resistance. The IPP100N06S3-04 offers optimum performance for very low current applications as well as high current applications. Additionally, it offers enhanced reliability and robust design against current surges.

The IPP100N06S3-04 is typically used in systems requiring high power switching with low power consumption. It has applications in a wide range of areas such as motor control, power supply, electrical equipment, and home appliances. In particular, this type of MOSFET is used in modern microcontrollers and embedded systems.

The working principle of the IPP100N06S3-04 can be described as follows. It operates with voltage applied between the gate and the source. The voltage applied to the gate draws electrons from the channel that forms between the source and the drain. This accumulation of electrons forms a conductive channel from the drain to the source resulting in a voltage drop between the two. The amount of current that can flow through the channel is proportional to the width and the length of the channel, and is determined by the gate voltage.

The IPP100N06S3-04 also features a P-channel MOSFET structure which is capable of carrying more current than the N-channel MOSFET. This type of MOSFET has an input voltage of 6V, a drain-source resistance of 150 mΩ, a drain-source breakdown voltage of 100V, and a maximum drain current of 32A. The IPP100N06S3-04 also offers a low RDS (on) at 25°C with an operating temperature range of -55°C to 175°C.

The IPP100N06S3-04 offers an array of benefits to users. It is capable of handling high current loads while offering good thermal properties and reduced on-resistance. Furthermore, it offers high cost performance, low input capacitance, and fast switching. All of these features come together to make the IPP100N06S3-04 a reliable and efficient MOSFET for a variety of applications.

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