| Allicdata Part #: | IPP110N20NAAKSA1-ND |
| Manufacturer Part#: |
IPP110N20NAAKSA1 |
| Price: | $ 6.18 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 200V 88A TO220-3 |
| More Detail: | N-Channel 200V 88A (Tc) 300W (Tc) Through Hole PG-... |
| DataSheet: |  IPP110N20NAAKSA1 Datasheet/PDF |
| Quantity: | 486 |
| 1 +: | $ 5.61960 |
| 10 +: | $ 5.05827 |
| 100 +: | $ 4.15913 |
| 500 +: | $ 3.48470 |
| 1000 +: | $ 3.03506 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 270µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | PG-TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 7100pF @ 100V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 87nC @ 10V |
| Series: | OptimWatt™ |
| Rds On (Max) @ Id, Vgs: | 10.7 mOhm @ 88A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 88A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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The IPP110N20NAAKSA1 is a drain enhanced metal–oxide–semiconductor field-effect transistor (MOSFET). As the name implies, it is an enhancement mode device which means that it conducts only when the gate voltage exceeds the threshold condition. The device comes in a 3-tab TO-247 package and is an ideal choice for switching and power management applications due to its high current capacity and reduced power consumption.
The device has a built-in gate-source diode, which minimizes the turn-on delays and increases the performances in high frequency switching applications. It is designed to operate with a source-drain voltage, VDS, of up to 110 Volts. Moreover, the IPP110N20NAAKSA1 has a maximum current rating of 55 Amps and a maximum power (dissipation) rating of 360 Watts.
With these specifications, the device is suitable for many applications where high-current, low-power dissipation, and space-constrained designs are needed. Examples of these applications include uninterruptible power supplies (UPS), server power supplies, high-voltage lighting systems, motor control circuitry, and home appliances. The device also has a conductive body, which allows for better thermal management as well as efficient operation with reduced switching losses.
When it comes to the working principle of the IPP110N20NAAKSA1, the device operates according to the enhancement mode MOSFET principles. To become operational, the device requires a positive gate-to-source voltage (VGS). This positive voltage causes the transistor to be non-conductive in the source-to-drain channel, due to a depleted area created between the source and the drain.
However, when a positive VGS is applied beyond the threshold voltage, an inversion layer is created near the surface of the substrate, allowing charges to flow between the source and the drain, thus creating an on-state. The values of VGS, VDS, and ID (drain current), all taken at a given temperature, will determine the on-state resistance, RDS(ON).
When a negative gate-to-source voltage is applied, the depletion region is destroyed, allowing charges to flow freely between the source and the drain. This creates an off-state which can be determined by the values of VGS, VDS, and ID taken at a given temperature.
In conclusion, the IPP110N20NAAKSA1 is a highly efficient enhancement type MOSFET power switch. This device is suitable for many applications, such as uninterruptible power supplies, server power supplies, high-voltage lighting systems, motor control circuitry, and home appliances. The IPP110N20NAAKSA1 is an excellent choice for designers of power management systems who require a low-power, highly efficient MOSFET switch.
The device has a built-in gate-source diode, which minimizes the turn-on delays and increases the performances in high frequency switching applications. It is designed to operate with a source-drain voltage, VDS, of up to 110 Volts. Moreover, the IPP110N20NAAKSA1 has a maximum current rating of 55 Amps and a maximum power (dissipation) rating of 360 Watts.
With these specifications, the device is suitable for many applications where high-current, low-power dissipation, and space-constrained designs are needed. Examples of these applications include uninterruptible power supplies (UPS), server power supplies, high-voltage lighting systems, motor control circuitry, and home appliances. The device also has a conductive body, which allows for better thermal management as well as efficient operation with reduced switching losses.
When it comes to the working principle of the IPP110N20NAAKSA1, the device operates according to the enhancement mode MOSFET principles. To become operational, the device requires a positive gate-to-source voltage (VGS). This positive voltage causes the transistor to be non-conductive in the source-to-drain channel, due to a depleted area created between the source and the drain.
However, when a positive VGS is applied beyond the threshold voltage, an inversion layer is created near the surface of the substrate, allowing charges to flow between the source and the drain, thus creating an on-state. The values of VGS, VDS, and ID (drain current), all taken at a given temperature, will determine the on-state resistance, RDS(ON).
When a negative gate-to-source voltage is applied, the depletion region is destroyed, allowing charges to flow freely between the source and the drain. This creates an off-state which can be determined by the values of VGS, VDS, and ID taken at a given temperature.
In conclusion, the IPP110N20NAAKSA1 is a highly efficient enhancement type MOSFET power switch. This device is suitable for many applications, such as uninterruptible power supplies, server power supplies, high-voltage lighting systems, motor control circuitry, and home appliances. The IPP110N20NAAKSA1 is an excellent choice for designers of power management systems who require a low-power, highly efficient MOSFET switch.
The specific data is subject to PDF, and the above content is for reference
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