Allicdata Part #: | IPP139N08N3G-ND |
Manufacturer Part#: |
IPP139N08N3 G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 80V 45A TO220-3 |
More Detail: | N-Channel 80V 45A (Tc) 79W (Tc) Through Hole PG-TO... |
DataSheet: | IPP139N08N3 G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3.5V @ 33µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1730pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 13.9 mOhm @ 45A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 45A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IPP139N08N3 G is a type of Field Effect Transistor (FET). FETs are a type of electrical component that utilizes a semiconductor device to control and amplify signals. FETs can be used to amplify, switch, and regulate the flow of current with a low voltage control signal. The IPP139N08N3 G is a specific type of FET known as a single Metal Oxide Semiconductor Field Effect Transistors (MOSFET). This type of FET combines an insulated-gate electrode with an n-channel or p-channel MOSFET. It is a type of MOS transistor that acts as a current or voltage regulator, or as a switch in circuits.
The IPP139N08N3 G is specifically a n-channel enhancement type Metal Oxide Semiconductor FET (MOSFET). It is used as a switch or as an amplifier for controlling circuits that are sensitive to voltage or current levels. The IPP139N08N3 G has a drain-to-source breakdown voltage of 13V and a maximum drain current of 8A. This makes the IPP139N08N3 G suitable for low- to mid-voltage applications where it can handle high drain currents.
The main function of the IPP139N08N3 G is to regulate or amplify a small control signal voltage. This means that it can be used as an amplifier or switch in circuits. The way this works is that the gate electrode of the MOSFET is connected to the control signal. When the control signal voltage or current changes, the gate electrode will modulate the flow of current between the source and drain terminals. This can then regulate the current or voltage in the circuit that the FET is a part of.
The IPP139N08N3 G is a versatile component and can be used in a variety of applications. It can be used for audio applications, such as amplifying sound signals in amplifiers or speakers. It can also be used to switch on or off circuits when power is applied, such as in an automobile\'s DC/DC converter. In addition, the IPP139N08N3 G can be used in power conversion circuits, such as those used to convert AC to DC or DC to AC, or to control the speed of a motor.
In conclusion, the IPP139N08N3 G is a type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a single n-channel enhancement type MOSFET and can be used as an amplifier, switch, or regulator in electronic circuits. The main function of the IPP139N08N3 G is to regulate or amplify a small control signal voltage, meaning it can be used in many applications for both voltage and current regulation, such as amplifiers, switches, and power conversion circuits.
The specific data is subject to PDF, and the above content is for reference
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