Allicdata Part #: | IPP120N06S402AKSA2-ND |
Manufacturer Part#: |
IPP120N06S402AKSA2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 120A PG-TO220-3 |
More Detail: | N-Channel 60V 120A (Tc) 188W (Tc) Through Hole PG-... |
DataSheet: | IPP120N06S402AKSA2 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Vgs(th) (Max) @ Id: | 4V @ 140µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO220-3-1 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 188W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 15750pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 195nC @ 10V |
Series: | Automotive, AEC-Q101, OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 2.8 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Description
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The IPP120N06S402AKSA2 is a single-channel, 40V N-channel power MOSFET ideal for a wide range of applications. Designed for superior switching and level-shifting performance, this MOSFET is also effective as an Ohmic contact and in signal amplifier designs. This MOSFET is suitable for use in electronic devices such as printers and consumer electronics, power conversion systems, motor control and industrial applications.
What is a MOSFET?
A MOSFET is a metal–oxide–semiconductor field effect transistor. It uses a metal gate, an insulating layer of oxide and a semiconductor substrate, typically silicon, to control the flow of current. MOSFETs are typically used for electronic switching and amplifying applications and as power devices to control current flow.Applications of the IPP120N06S402AKSA2
The IPP120N06S402AKSA2 is ideal for a wide range of applications. Due to its superior switching and level-shifting performance, it is suitable for use in electronics, power conversion systems, motor control and industrial applications. This MOSFET is also effective as an Ohmic contact and in signal amplifier designs.In particular, the IPP120N06S402AKSA2 is ideal for motor control, DC-DC conversion, power supplies and voltage regulation applications. As it is a single-channel MOSFET, it is highly efficient and offers low on-resistance compared to other transistors, enabling higher current and higher switching speeds.The IPP120N06S402AKSA2 is also suitable for use in printer and consumer electronics, which require stable and low switching power. It can also be used in automotive applications such as sound systems, where it can be used to eliminate noise initiated by switches or relays while providing a stable output voltage.Working Principle of the IPP120N06S402AKSA2
The working principle of the IPP120N06S402AKSA2 is based on the working principle of any MOSFET. It has a metal gate, an insulating layer of oxide and a semiconductor substrate, typically silicon, to control the flow of current.When voltage is applied to the source, electrons are pulled from the source contact to the drain contact. This creates an excess of electrons on the source side and an excess of holes on the drain side. Multiple current channels form between the source and the drain, and the current flow is regulated by the amount of voltage applied to the gate. As the source-drain voltage increases, the current flowing through the channel also increases until it reaches a maximum, known as the saturation current. As the gate voltage is increased, the current can be further increased, but the device can never exceed its maximum safe operating temperature. Controlling the flow of current in this manner enables the MOSFET to be used as a switch or amplifier in a variety of applications.Conclusion
In conclusion, the IPP120N06S402AKSA2 is a 40V N-channel power MOSFET ideal for a wide range of applications. Designed for superior switching and level-shifting performance, this MOSFET is suitable for use in electronic devices such as printers and consumer electronics, power conversion systems, motor control and industrial applications. The working principle of the IPP120N06S402AKSA2 is based on the working principle of any MOSFET. It has a metal gate, an insulating layer of oxide and a semiconductor substrate, typically silicon, to control the flow of current. Controlling the flow of current in this manner enables the MOSFET to be used as a switch or amplifier in a variety of applications.The specific data is subject to PDF, and the above content is for reference
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