IPP100N06S3L-03 Allicdata Electronics
Allicdata Part #:

IPP100N06S3L-03IN-ND

Manufacturer Part#:

IPP100N06S3L-03

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 100A TO-220
More Detail: N-Channel 55V 100A (Tc) 300W (Tc) Through Hole PG-...
DataSheet: IPP100N06S3L-03 datasheetIPP100N06S3L-03 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 230µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 26240pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 550nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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An IPP100N06S3L-03, also known as a static drain type Metal–oxide–semiconductor Field Effect Transistor, is a relatively low-current, surface-mount semiconductor device. Its advantages include low gate input current, low on-resistance, fast switching speed, and wide operating temperature range. It is a popular choice for power-management applications, such as switching power supplies, solar inverter, motor drivers, and various other industrial applications.

The overall function of the IPP100N06S3L-03 MOSFET is to control a load such as a motor, light bulb, solenoid valve, etc., using an input such as a voltage or current from a microcontroller, etc. It works by using an electric field to control the movement of charges between a source and drain of a semiconductor which then acts as an amplifier to control the load.

The IPP100N06S3L-03 is an N-channel enhancement-mode MOSFET which features an unique P-channel design allowing for a low on-resistance at low gate drive. This low on-resistance provides high-efficiency switching between source and drain even at very low current levels.

Since the IPP100N06S3L-03 MOSFET is a static drain type device, it has no need of an additional gate driver or high supply voltage to switch on. The low on-resistance of 2.6 ohms enables excellent load switching capability. The maximum drain to source voltage is ±30V and the continuous current is rated for up to 100A. The fast switching speeds of the IPP100N06S3L-03 also make it a suitable choice for various industrial applications.

The application field of the IPP100N06S3L-03 MOSFET is fairly vast as it can be used to control anything from low voltage and low wattage devices such as small motors to large wattage power switching devices. Due to its low gate input current, fast switching speed and wide operating temperature range, the IPP100N06S3L-03 can be used in various applications such as switching power supplies, automotive systems, renewable energy (photovoltaics or wind turbines), industrial motor drivers, and many more. It is an ideal choice for power-management applications as it provides low on-resistance and high efficiency switching.

In conclusion, the IPP100N06S3L-03 MOSFET is an excellent choice for various applications due to its low gate input current, low on-resistance, fast switching speed, and wide operating temperature range. It is a suitable choice for power-management applications, automotive systems, solar inverters, and other industrial applications. With its varying capabilities and features, the IPP100N06S3L-03 MOSFET provides an excellent, economical solution for use in many different applications.

The specific data is subject to PDF, and the above content is for reference

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