IPP147N12N3GXKSA1

The IPP147N12N3GXKSA1 is a MOSFET transistor with a maximum drain current rating of 41A, a maximum gate threshold voltage of 6V, and a maximum power dissipation of 165W. It is suitable for use in a variety of applications, including high-side load drivers, DC-DC converters, low-sideload drivers, power switches, and under-voltage lockout protection. This article will explore the applications for the IPP147N12N3GXKSA1 MOSFET and its working principles.

Applications

The IPP147N12N3GXKSA1 MOSFET is an ideal choice for a wide range of applications. It is well suited for use in DC-DC converters and under-voltage lockout circuits, as it features an extremely low drain-source on-resistance (R_DSon) of 3.2mΩ and a peak current rating of 41A. This makes it capable of handling high load currents with minimal power loss.

The IPP147N12N3GXKSA1 also makes an excellent choice for high-power load drivers, as it has a maximum power dissipation rating of 165W. This allows it to handle high currents without overheating. Additionally, it has a maximum breakdown voltage rating of 500V, making it suitable for use in high-voltage applications. It can also be used as a low-side power switch, as it features a maximum gate threshold voltage of 6V.

Working Principles

The IPP147N12N3GXKSA1 is a voltage-controlled device, meaning that its output is determined by the voltage applied to its gate. When the gate voltage is below the threshold voltage (VGS_th), the MOSFET is in its off-state, meaning that current cannot flow through it. When the gate voltage exceeds VGS_th, the MOSFET is in its on-state, and current can flow through it.

This MOSFET also features an extremely low R_DSon value of 3.2mΩ. This is a measure of the resistance between the source and drain when the MOSFET is in its on-state. A low R_DSon value means that the MOSFET is capable of handling large currents without significant power loss.

Conclusion

The IPP147N12N3GXKSA1 MOSFET is a robust and versatile device, capable of handling a wide range of applications. It has a low R_DSon value and a maximum power dissipation rating of 165W, making it well suited for high-power load drivers and DC-DC converters. Additionally, it has a maximum gate threshold voltage of 6V, making it suitable for low-side power switches. These qualities make it an ideal choice for a variety of applications.