IPP180N10N3GXKSA1

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The IPP180N10N3GXKSA1 is a type of Field Effect Transistor (FET). It is also commonly known as a Metal Oxide Semiconductor FET (MOSFET). A MOSFET is a type of transistor commonly used for amplifying electrical signals or for switching between two different levels of electricity. It is one of the most popular types of transistors used around the world.

The IPP180N10N3GXKSA1 is a single gate MOSFET, which means that it has only one control gate for regulating the output signal. It has very low on resistance of 0.2Ω max and a very low gate charge of 8.5nC max. The total gate charge, from source to drain, is only 10nC. This makes it an ideal choice for applications that require fast switching and lower power consumption.

The IPP180N10N3GXKSA1 is most often used in power switching applications, such as motor control and power supplies. It can also be used in low voltage applications that require switching of low load currents. In these applications, the low on resistance of the device helps reduce power losses due to resistive heating. Additionally, the very low gate charge allows for very fast switching times, making it a great choice for faster switching and higher efficiency.

The working principle of the IPP180N10N3GXKSA1 is based on the fact that when a voltage is applied to its control gate, it forms an electric field in the semiconductor substrate, which in turn attracts and repels electrons, changing the path of the current. This opens and closes a “channel” which controls the flow of current through the FET.

The IPP180N10N3GXKSA1 is a very versatile device and is used in a wide range of applications. It is used in power switching, motor control, and voltage regulation circuits, as well as in low voltage and low power applications. It offers excellent switching speed, low on resistance and low gate charge, making it a great choice for applications that require fast switching and lower power consumption.

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