IPP60R074C6XKSA1

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The Ipp60R074c6Xksa1 is a a high-voltage power MOSFET transistor with a drain–source breakdown voltage bdss of 600 V, has lower gate charge than competing products, and low maximum on-state resistance, rdson. It is designed for use in switch mode power supplies (SMPS) as well as low voltage motor control, advanced lighting and smart power applications. It is also well suited for use in DC–DC converters and resonant converters in audio and telecom applications.

The Ipp60R074c6Xksa1 is constructed around an N-channel depletion-mode MOSFET. This specific designchoice has been implemented to overcome its predecessor’s issues with dynamic dv/dt and dl/dt. The main feature of this new power transistor is its enhanced durability, while maintaining its low on-state resistance and excellent thermal properties. It is rated for a maximum drain current of 45A with a continuous drain current of 30 A, and operates over a wide temperature range of -55 to 175°C.

This power MOSFET works by using the current flow between source and drain terminals for the amplification process. The action is controlled by the voltage on the gate terminal relative to the source terminal. The voltage provides the electric field which controls the flow of electrons from source to drain. By controling how much current passes from source to drain, the transistor becomes a powerful switch. The ON/OFF status of the output stage of the transistor is determined by the amount of voltage applied to its gate terminal. A voltage of 0V indicates that the MOSFET is off and its output stage is in a high-resistance state, for example, in case of the Ipp60R074c6Xksa1, it could be up to 600 V.

It is important to note that the power MOSFET should be operated within its safe operating area (SOA), with the gate-source voltage between zero and 12 V and maximum drain current of 45 A. The power MOSFET must have a high input impedance that prevents the flow of excessive current. The Ipp60R074c6Xksa1 is designed to perform efficiently in applications where a high voltage and load-switching capability is required. Its low gate charge and maximum on-state resistance reduce conduction losses, resulting in high efficiency in switching applications.

Another impressive feature of the Ipp60R074c6Xksa1 is its ability to endure high-energy events. If the power MOSFET is subjected to a severe electrical event, such as a large current surge or a high-energy pulse, the device is designed to absorb the energy and ultimately recover from the event. This is done by using a low internal capacitance and a fast recovery from avalanche mode. The fast recovery feature of the Ipp60R074c6Xksa1 ensures a quick return to its OFF-state and prevents degrading the drain-source voltage.

In conclusion, the Ipp60R074c6Xksa1 is a powerful, high-voltage MOSFET that can be used in a variety of applications such as switch-mode power supplies, Smart power applications and low voltage motor control. It is renowned for its high voltage withstanding capabilities, low junction capacitance and maximum on-state resistance. The Ipp60R074c6Xksa1 is designed to perform efficiently in applications requiring a high voltage and load-switching capability.

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