
Allicdata Part #: | IPP65R310CFDXKSA1-ND |
Manufacturer Part#: |
IPP65R310CFDXKSA1 |
Price: | $ 1.99 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V 11.4A TO220 |
More Detail: | N-Channel 650V 11.4A (Tc) 104.2W (Tc) Through Hole... |
DataSheet: | ![]() |
Quantity: | 897 |
1 +: | $ 1.80180 |
10 +: | $ 1.62540 |
100 +: | $ 1.30624 |
500 +: | $ 1.01595 |
1000 +: | $ 0.84179 |
Vgs(th) (Max) @ Id: | 4.5V @ 440µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 104.2W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 310 mOhm @ 4.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11.4A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IPP65R310CFDXKSA1 is a single N-channel silicon-on-insulator (SOI) power MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This device has the capability to handle up to 25V, and features low on-resistance. Capable of operating at high frequency and improving system efficiency, the IPP65R310CFDXKSA1 is a power transistor designed for a wide range of applications.
Applications of the IPP65R310CFDXKSA1 include, but are not limited to, consumer electronics, industrial motors, lighting and appliance controls, power supplies, and adjustable speed motor drives. In consumer electronics, this device can be used to switch power supply, monitor load current, and regulate power. In industrial motors and lighting, the IPP65R310CFDXKSA1 can be used for over-current and over-voltage protection, as well as for implementing efficient current mode control. it can also be used in power supplies for control or monitoring.
The IPP65R310CFDXKSA1 works on the principle of a MOSFET, which consists of source, drain and gate terminals. A voltage applied to the gate controls the current between the source and drain. When the gate-source voltage is zero (VGS = 0V), the drain-source resistance, or RDS (On), is at its maximum, meaning that there is no current flowing. In applications such as that of the IPP65R310CFDXKSA1, the gate-source voltage is below the threshold voltage (VGS < VTH). This causes the RDS (On) to be at its minimum, allowing current to flow through the drain-source path.
The VTH is the minimum amount of voltage required in order to turn the MOSFET \'On\'. The MOSFET is kept in the \'Off\' state when the gate-source voltage is below VTH. In the \'On\' state, the current through the drain-source channel can be controlled by adjusting the gate-source voltage. This makes the MOSFET an ideal switch, capable of handling a wide range of applications.
The IPP65R310CFDXKSA1 also has the capability of a low gate-source capacitance, or CGS. Low CGS means that the gate can charge and discharge quickly, allowing current to flow at high frequencies. This is extremely useful in applications such as adjustable speed motor drives, where current is rapidly inverted.
In summary, the IPP65R310CFDXKSA1 is a single N-channel silicon-on-insulator (SOI) power MOSFET designed to provide low on-resistance and high frequency capabilities. It is capable of handling up to 25V and suitable for a wide range of applications, including consumer electronics, industrial motors, lighting, power supplies, and adjustable speed motor drives.
The specific data is subject to PDF, and the above content is for reference
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IPP65R380C6XKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 10.6A TO... |
IPP65R280E6XKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 13.8A TO... |
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