IPP60R520E6XKSA1 Discrete Semiconductor Products

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The IPP60R520E6XKSA1 is a MOSFET (metal-oxide-semiconductor field-effect transistor) which is a type of transistor consisting of source, gate and drain terminals that operates similarly to an insulated-gate bipolar transistor (IGBT). It is a single-channel, normally-off insulated-gate field-effect transistor (IGFET) with a low on-resistance that offers low switching losses. It is suitable for use in a variety of applications from automotive and industrial motor control to power converters and general power applications.

IPP60R520E6XKSA1 Application Field

The IPP60R520E6XKSA1 is widely used in various applications,such as automotive, industrial motor control, power converters, and other general power applications. It is an excellent solution for applications requiring low on-resistance, such as motor control in automobiles and other industrial equipment. In power converters, the MOSFET features high efficiency and EMI filtering to help with efficiencies above 90%. The device is also used in telecommunications applications and power supplies.

In automotive applications, it is used for voltage step conversion and as an enhancement-mode device for motor control. In motor control applications, the IPP60R520E6XKSA1 is capable of switching heavy loads up to 400 volts and can toggle at frequencies up to 1.5 MHz. This makes it suitable for use in automotive audio systems, lighting systems, car doors and windows, and other motor control applications. It is also used in traction control for vehicle safety.

Working Principles

The IPP60R520E6XKSA1 operates similarly to an IGBT, however instead of having two MOSFETs connected in parallel in the IGBT structure, it features just one MOSFET. This means that losses in the form of current leakage are eliminated, thus making the device more efficient. Additionally, the device features a built-in body diode which eliminates the need for an external diode.

The device works by creating an insulated barrier between the gate and body. This is accomplished by generating a negative charge in the gate-to-body junction. When a positive voltage is applied to the gate terminal, an electric field is generated which breaks down the insulated barrier. A current is then able to flow from the source to the drain. The current can be regulated by adjusting the voltage applied to the gate terminal.

The IPP60R520E6XKSA1 has the ability to switch P-channel devices with a low on-resistance of 0.13 ohms. It features a normal-off mode, which means it is off when the gate voltage is 0 volts and will only turn on when the gate voltage is increased. It also features a temperature range of -55 to +175°C, which makes it suitable for a wide range of applications.

In Conclusion

The IPP60R520E6XKSA1 is a single-channel, normally-off insulated-gate field-effect transistor (IGFET) with a low on-resistance that offers low switching losses. It is suitable for use in a variety of applications from automotive and industrial motor control to power converters and general power applications. It is capable of switching heavy loads up to 400 volts and can toggle at frequencies up to 1.5 MHz, making it an ideal choice for various automotive, industrial and power supply applications.

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