IPP60R360P7XKSA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FETs (field effect transistors) and MOSFETs (metal oxide semiconductor field effect transistors) are key components for modern electronics. In this article, we\'ll discuss the application field and working principle of the IPP60R360P7XKSA1, a vertical logic level N-channel power MOSFET.

Application field

The IPP60R360P7XKSA1 is designed for use in a variety of electronic devices, from computers, tablets and smartphones to home audio systems. It can be used for power amplification and switching, especially in compact and high-current devices. Its principal application is as a power switch for computations, high-frequency communications, and automated power management, as well as for controlling pulse-width-modulated circuits.

Working principle

The IPP60R360P7XKSA1 is a vertical logic level FET, meaning it allows a single logic input to control the MOSFET\'s switch state. This makes the IPP60R360P7XKSA1 ideal for use in applications that require quick and simple switching of high current loads. The FET works by using two inputs, the gate and the drain, which are used to switch the current flow. When the gate voltage is higher than the drain voltage (normally at 0V), the transistor is \'on\' and the current can flow. When the gate voltage is lower than the drain voltage, the transistor is \'off\'.

The IPP60R360P7XKSA1 is designed to be used as a power switch for devices that require high current, such as home audio systems or high-end desktop computers. The device has a low-on-resistance and offers high switching speeds, making it suitable for today\'s rapid mobile devices and gaming. It is capable of switching currents of up to 200V and 11A, and can be used in a wide range of voltage ranges.

In conclusion, the IPP60R360P7XKSA1 is a versatile and efficient vertical logic level N-channel power MOSFET suitable for a variety of applications, including power amplification and switching. Its low-on-resistance and high switching speed make it ideal for powering high speed computing and mobile devices.

The specific data is subject to PDF, and the above content is for reference