
Allicdata Part #: | IPP65R310CFDAAKSA1-ND |
Manufacturer Part#: |
IPP65R310CFDAAKSA1 |
Price: | $ 1.38 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V TO-220-3 |
More Detail: | N-Channel 650V 11.4A (Tc) 104.2W (Tc) Through Hole... |
DataSheet: | ![]() |
Quantity: | 1000 |
500 +: | $ 1.23935 |
Vgs(th) (Max) @ Id: | 4.5V @ 440µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 104.2W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1110pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 10V |
Series: | Automotive, AEC-Q101, CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 310 mOhm @ 4.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11.4A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tube |
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.Introduction
The general-purpose N-channel vertical diffused MOSFET, IPP65R310CFDAAKSA1 (henceforth referred to as a FET) is a field-effect transistor consisting of a source, a drain and a gate. It has a vertical construction, which means the conducting channel lies between the source and the drain terminals, perpendicular to the plane of the chip. It is often used in audio preamplifiers, video amplifiers, low-noise amplifiers, and electronic switching circuits.
Applications
As stated previously, FETs are used in many applications. The IPP65R310CFDAAKSA1 FET is most commonly used for low-noise applications. It is regarded as a audio preamplifier, since it can amplify low-level signals accurately and without introducing additional noise. It is also used in video amplifiers to improve signal-to-noise ratio. Additionally, it can be used in low-noise amplifiers for sensitive instruments. Finally, IPP65R310CFDAAKSA1 FETs are also used in electronic switching circuits, such as the on/off switch in speakers and musical instruments.
Working Principle
The working principle of a FET is similar to that of a bipolar junction transistor. There is a small conducting channel between the source and the drain. This conducting channel is modulated by the electric field generated by a gate electrode. When a gate voltage is applied, electrons flow between the source and the drain, creating a conducting channel. The larger the gate voltage, the larger the conducting channel, and the more current that can be passed between the source and drain.
Conclusion
The IPP65R310CFDAAKSA1 FET is a general-purpose N-channel vertical diffused MOSFET. It is most commonly used for low-noise applications, such as audio preamplifiers, video amplifiers, low-noise amplifiers, and electronic switching circuits. The working principle of a FET is similar to that of a bipolar junction transistor, whereby the conducting channel is modulated by the electric field generated by a gate electrode. The larger the gate voltage, the larger the conducting channel, and the more current that can be passed between the source and drain.
The specific data is subject to PDF, and the above content is for reference
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IPP65R310CFDAAKSA1 | Infineon Tec... | 1.38 $ | 1000 | MOSFET N-CH 650V TO-220-3... |
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IPP65R110CFDAAKSA1 | Infineon Tec... | 5.57 $ | 478 | MOSFET N-CH 650V TO-220-3... |
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IPP60R099P6XKSA1 | Infineon Tec... | 4.31 $ | 20 | MOSFET N-CH 600V TO220-3N... |
IPP60R950C6XKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 4.4A TO2... |
IPP65R045C7XKSA1 | Infineon Tec... | 9.17 $ | 1000 | MOSFET N-CH 650V 46A TO-2... |
IPP65R380C6XKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 10.6A TO... |
IPP65R280E6XKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 13.8A TO... |
IPP60R160P6XKSA1 | Infineon Tec... | 2.56 $ | 1000 | MOSFET N-CH 600V TO220-3N... |
IPP60R380E6XKSA1 | Infineon Tec... | 1.57 $ | 210 | MOSFET N-CH 600V 10.6A TO... |
IPP60R099C6XKSA1 | Infineon Tec... | 4.94 $ | 1000 | MOSFET N-CH 600V 37.9A TO... |
IPP65R074C6XKSA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 650V 57.7A TO... |
IPP60R099P7XKSA1 | Infineon Tec... | 3.69 $ | 134 | MOSFET N-CH 600V 31A TO22... |
IPP65R660CFDXKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 6A TO220... |
IPP65R420CFDXKSA1 | Infineon Tec... | 0.88 $ | 1000 | MOSFET N-CH 650V 8.7A TO2... |
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