IPP60R199CPXKSA1 Allicdata Electronics
Allicdata Part #:

IPP60R199CPXKSA1-ND

Manufacturer Part#:

IPP60R199CPXKSA1

Price: $ 2.90
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 650V 16A TO220-3
More Detail: N-Channel 650V 16A (Tc) 139W (Tc) Through Hole PG-...
DataSheet: IPP60R199CPXKSA1 datasheetIPP60R199CPXKSA1 Datasheet/PDF
Quantity: 1
1 +: $ 2.63340
10 +: $ 2.34927
100 +: $ 1.92616
500 +: $ 1.55974
1000 +: $ 1.31545
Stock 1Can Ship Immediately
$ 2.9
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 139W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tube 
Description

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The IPP60R199CPXKSA1 is a 60V N-Channel MOSFET designed specifically for applications requiring high speed switching and low on-state resistance. Its small form factor and low cost make it ideal for consumer products, automotive electronics, and other applications requiring high current switching.

In electronics, a MOSFET (metal–oxide–semiconductor field–effect transistor, or MOS transistor) is a type of transistor used for amplifying and It switches electronic signals. It is the most versatile of all semiconductor devices, as it is designed with entirely different structures and functions than other types of transistors. In recent years, MOSFETs have been used in a wide range of electronics, from communication systems to biomedical devices.

The IPP60R199CPXKSA1 is a single gate MOSFET with a rated drain-source voltage of 60V and a drain-source current-handling capacity of up to 50A. It is an attractive device for a variety of applications, from consumer and industrial to automotive due to its small size, high speed switching, and low on-state resistance.

Its small form factor and low cost make the IPP60R199CPXKSA1 an ideal choice for consumer products, automotive electronics and other applications that require high current switching. Additionally, its wide drain current range and high operation speed allow it to perform well in a variety of operating temperature ranges.

The working principle of the IPP60R199CPXKSA1 is based on the principle of gate control. The gate terminal of the device is connected to an external voltage source and controls the on-state conduction of the device. When a positive voltage is applied to the gate, a current is generated, which in turn attracts electrons to the oxide layer between the drain and source of the device. This action reduces the width of the channel between the drain and source of the device and increases the resistance of the device, which limits the drain-source current flow.

The IPP60R199CPXKSA1 can be used in a variety of applications, such as gate driver circuits, motor drives, switched-mode power supplies, power converters, and audio amplifiers. It is also suitable for switching applications that require low on-state resistance, such as those found in automotive electronics and consumer products.

The IPP60R199CPXKSA1 is a single gate MOSFET that is highly efficient, cost-effective and reliable. Its wide drain current range and high speed switching makes it an ideal choice for a variety of applications that require low on-state resistance and high current switching. Additionally, its small size makes it a great option for consumer products, automotive electronics and other applications that require high current switching.

The specific data is subject to PDF, and the above content is for reference

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