IPP60R1K4C6XKSA1 Allicdata Electronics
Allicdata Part #:

IPP60R1K4C6XKSA1-ND

Manufacturer Part#:

IPP60R1K4C6XKSA1

Price: $ 0.43
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V 3.2A TO220
More Detail: N-Channel 600V 3.2A (Tc) 28.4W (Tc) Through Hole P...
DataSheet: IPP60R1K4C6XKSA1 datasheetIPP60R1K4C6XKSA1 Datasheet/PDF
Quantity: 1000
500 +: $ 0.39025
Stock 1000Can Ship Immediately
$ 0.43
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 28.4W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Tube 
Description

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The IPP60R1K4C6XKSA1 is a popularly used MOSFET that is both rated to the highest of industry standards and at the same time appreciate for its impressive reliability. This type of transistor is used mainly in industrial and automotive applications, providing a wide range of advantages over traditional types of transistors. It is also highly efficient, making it a great choice for applications where high levels of power are needed.


Application field and working principle

The IPP60R1K4C6XKSA1 is a vertical MOSFET, meaning that it utilizes a three-terminal device based on the principle of a metal-oxide-semiconductor (MOS) capacitor. This type of device is used in applications requiring high current capacity, excellent switching speeds and the ability to handle very high frequencies. The vertical MOSFET has superior electrical and thermal characteristics compared to traditional vertical BJTs, making it a great choice for applications where high power handling is required.


In conditions where low-noise signals are critical, the IPP60R1K4C6XKSA1 is an ideal choice due to its low "threshold voltage" of approximately 1 volt. This allows extremely low-noise signals to be used in circuit designs where high performance is needed. Additionally, the transistor can often be operated at voltages up to 500 volts, making it a great choice for DC-DC converters, motor controllers, and other high-voltage medical and industrial applications.


The IPP60R1K4C6XKSA1 is typically used for logic-level and high-side switches, due to its ability to handle high frequencies and a wide range of current capacities. The transistor also boasts a relatively low on-resistance, meaning that less power is lost when switching from one state to another. Additionally, this device can be operated at extremely high frequencies up to approximately 50MHz, enabling high-speed control applications.


The IPP60R1K4C6XKSA1 is also widely used in the automotive industry due to its impressive power handling capabilities. It is often used for switching lights and electronics, motor control, and general automotive control systems. Additionally, this type of transistor is also a popular choice for power distribution and signal-level control applications due to the low "threshold voltage" mentioned earlier.


In conclusion, the IPP60R1K4C6XKSA1 is a highly versatile and reliable MOSFET that is often used in industrial and automotive applications. Its low "threshold voltage" and ability to handle high frequencies makes it an ideal choice for applications requiring high levels of power handling, as well as DC-DC converters, motor control, and signal-level control. The IPP60R1K4C6XKSA1 is an exemplary example of how modern transistors are achieved industry standards regarding reliability and performance.

The specific data is subject to PDF, and the above content is for reference

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