IPP65R150CFDXKSA1

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The IPP65R150CFDXKSA1 is part of the IPP65 series of n-channel insulated gate bipolar transistors (IGBTs) manufactured by Infineon Technologies. This series of IGBT modules is primarily used in power semiconductor applications, such as motor control, uninterruptible power supplies and industrial digital inverters.

The IPP65R150CFDXKSA1 module features a vertical-channel, high-power N-channel MOSFET built on a low-profile DirectFET® package. It is suitable for many power applications because of its extremely low on-resistance, low in-circuit threshold voltage and high-temperature operation. It also has a fast switching speed and excellent thermal characteristics.

The IPP65R150CFDXKSA1 module can operate at peak blocking/contact voltage rating of 1800V/430V and a continuous drain-source voltage rating of 600V/1200V. It can also support a peak drain-source current of 25A and a continuous drain-source current of 10A. The maximum junction-to-ambient thermal resistance is 36.0°C/W.

The working principle of this module is simple. When a positive voltage potential is applied to the gate and a negative voltage potential is applied to the source-drain circuit, a MOSFET current flows between the source and drain. As the gate voltage increases, the resistance between the source and drain decreases, allowing more current flow. The module provides a high degree of control over the current and voltage, allowing precise tuning of the device.

The IPP65R150CFDXKSA1 module is extensively used in many types of power electronics applications, such as motor control and digital inverters. It can handle high power requirements with a high degree of precision and can be adapted for many types of power applications. Its features also make it suitable for high-temperature operations and switching applications.

Overall, the IPP65R150CFDXKSA1 MOSFET with its low-profile design and superior switching characteristics, proves to be an ideal choice for many power applications. Thanks to its small size, high-temperature operation and low on-resistance, this module is suitable for many modern power electronics applications.

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