IPP60R190P6XKSA1

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The IPP60R190P6XKSA1 is a high performance, low on-resistance, N channel enhancement mode Vertical Field-Effect Transistor (VFET). It has a maximum drain-source voltage of 60V, maximum drain current of 11A and maximum power dissipation of 62W. It also has a high switching speed, low gate charge and low gate to drain leakage.

This particular type of MOSFET is mainly used in a wide variety of power electronics applications, including high current, low voltage operation with the ability to provide efficient switching and power control. Typical applications include switching power supplies, motor control, DC-DC converters, and lighting control. It is also suitable for other applications requiring power electronics and switching power control.

The working principle of the IPP60R190P6XKSA1 MOSFET is based on the use of an electrode gate to control the flow of charge carriers between the source and the drain. A gate voltage is applied to the gate terminal of the MOSFET that permits or inhibits the flow of charge carriers through the semiconductor material. This selective control of the current flow between the source and the drain results in a high degree of efficiency. The MOSFET also provides a low level of total voltage drop across the load, resulting in improved system efficiency.

The IPP60R190P6XKSA1 features an advanced planar stripe cell process technology that has been specifically designed to provide excellent on-state resistance and fast switching speeds. The use of high-density cell spacing enhances the on-state resistance, while the large channel area reduces gate charge and improves switching speeds. It also features a low gate to drain leakage current and a wide drain-source voltage tolerance.

The device benefits from very low on-resistance which is optimised for compatibility with low input gate voltages. It is designed to allow pulses to pass through quickly and reliably, relative to other types of power MOSFETs. It is also resistant to thermal and loading stress, making it durable and reliable even in extreme temperatures and harsh conditions.

In conclusion, the IPP60R190P6XKSA1 is a modern, low on-resistance, high performance N channel MOSFET, designed for power electronics application requiring efficient switching and power control. It has a wide range of features, including a high switching speed, low gate charge and low gate to drain leakage current. It is suitable for use in a variety of applications, such as switching power supplies, motor control and DC-DC converters.

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