
Allicdata Part #: | IPP65R380E6XKSA1-ND |
Manufacturer Part#: |
IPP65R380E6XKSA1 |
Price: | $ 1.88 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V 10.6A TO220 |
More Detail: | N-Channel 650V 10.6A (Tc) 83W (Tc) Through Hole PG... |
DataSheet: | ![]() |
Quantity: | 306 |
1 +: | $ 1.71360 |
10 +: | $ 1.54791 |
100 +: | $ 1.24387 |
Vgs(th) (Max) @ Id: | 3.5V @ 320µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 710pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 3.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10.6A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tube |
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The IPP65R380E6XKSA1 is a high-power, self-supported N-Channel silicon field-effect transistor (FET). It is packaged in a TO-100 metal case and is rated for a drain-source voltages up to +380V and a drain-source current up to 6A. This high-power device is designed for applications such as motor control, high-current switching, power and load switching, load sensing, and load monitoring.
The FET, also called a "metal oxide semiconductor field-effect transistor", is a type of transistor used in modern electronic circuits. This type of transistor is essentially a semiconductor-controlled device that is used to control and regulate the electrical characteristics of a circuit. Through the control of voltage and current, FETs can provide a wide range of amplification, switching, and other electronic functions.
A FET is made up of three regions, a source, a drain, and a gate. In an N-Channel FET like the IPP65R380E6XKSA1, the source and drain regions are both N-type materials. A small voltage applied to the gate can allow current to flow between the two terminals in a type of "on-off switch" fashion. By varying the voltage, the amount of current flowing can be controlled.
The IPP65R380E6XKSA1 is most commonly used in applications such as motor control, high-current switching, power switching, and load monitoring. It is often found in motor controllers, power switches, generators, UPSs, inverters, and other power related applications. For load monitoring, the FET is used to sense the current and voltage of the load, providing an accurate reading at all stages of operation.
In addition, the high-power FET is ideal for applications requiring isolation and protection from high voltages and currents. This is commonly seen in power supplies, where the FET acts as a switch to protect sensitive components from electrical overload. Furthermore, the device can be used in devices such as power amplifiers, LCD drivers, and voltage regulators.
The IPP65R380E6XKSA1 has a wide range of operational capabilities and is well suited for a variety of applications. It is capable of handling up to 6A and 380V and operates from -55°C to 150°C. It is an ideal solution for such applications as motor control, power switching, load sensing, and load monitoring.
The specific data is subject to PDF, and the above content is for reference
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IPP65R600C6XKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 7.3A TO2... |
IPP60R099CPAAKSA1 | Infineon Tec... | 3.7 $ | 1000 | MOSFET N-CH 600V 31A TO-2... |
IPP60R125CFD7XKSA1 | Infineon Tec... | 3.35 $ | 1000 | HIGH POWER_NEWN-Channel 6... |
IPP60R520E6XKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 8.1A TO2... |
IPP60R600E6XKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 7.3A TO2... |
IPP65R110CFDAAKSA1 | Infineon Tec... | 5.57 $ | 478 | MOSFET N-CH 650V TO-220-3... |
IPP65R190CFDAAKSA1 | Infineon Tec... | 1.84 $ | 1000 | MOSFET N-CH 650V TO-220-3... |
IPP60R170CFD7XKSA1 | Infineon Tec... | 2.42 $ | 1000 | MOSFET N-CH TO220-3N-Chan... |
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IPP60R074C6XKSA1 | Infineon Tec... | 6.92 $ | 1000 | MOSFET N-CH 600V 57.7A TO... |
IPP60R600C6XKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 7.3A TO2... |
IPP60R099P6XKSA1 | Infineon Tec... | 4.31 $ | 20 | MOSFET N-CH 600V TO220-3N... |
IPP60R950C6XKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 4.4A TO2... |
IPP65R045C7XKSA1 | Infineon Tec... | 9.17 $ | 1000 | MOSFET N-CH 650V 46A TO-2... |
IPP65R380C6XKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 10.6A TO... |
IPP65R280E6XKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 13.8A TO... |
IPP60R160P6XKSA1 | Infineon Tec... | 2.56 $ | 1000 | MOSFET N-CH 600V TO220-3N... |
IPP60R380E6XKSA1 | Infineon Tec... | 1.57 $ | 210 | MOSFET N-CH 600V 10.6A TO... |
IPP60R099C6XKSA1 | Infineon Tec... | 4.94 $ | 1000 | MOSFET N-CH 600V 37.9A TO... |
IPP65R074C6XKSA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 650V 57.7A TO... |
IPP60R099P7XKSA1 | Infineon Tec... | 3.69 $ | 134 | MOSFET N-CH 600V 31A TO22... |
IPP65R660CFDXKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 6A TO220... |
IPP65R420CFDXKSA1 | Infineon Tec... | 0.88 $ | 1000 | MOSFET N-CH 650V 8.7A TO2... |
IPP60R600P7XKSA1 | Infineon Tec... | -- | 474 | MOSFET N-CH 650V 6A TO220... |
IPP60R180P7XKSA1 | Infineon Tec... | 2.02 $ | 369 | MOSFET N-CH 650V 18A TO22... |
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IPP65R110CFDXKSA1 | Infineon Tec... | 4.79 $ | 1000 | MOSFET N-CH 700V 31.2A TO... |
IPP60R120P7XKSA1 | Infineon Tec... | 2.92 $ | 1000 | MOSFET N-CH 600V 26A TO22... |
IPP60R080P7XKSA1 | Infineon Tec... | 4.31 $ | 433 | MOSFET N-CH 600V 37A TO22... |
IPP60R090CFD7XKSA1 | Infineon Tec... | 5.33 $ | 478 | HIGH POWER_NEWN-Channel 6... |
IPP60R520C6XKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 8.1A TO2... |
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