IRF1104S

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The IRF1104S is a single N-channel power metal-oxide-semiconductor field effect transistor (MOSFET) designed for use in a variety of electronic systems such as automotive, consumer electronic, and industrial, medical, and military applications. The IRF1104S is capable of providing high-voltage operation and very low on-resistance with excellent thermal stability and long term reliability.

The IRF1104S is a power MOSFET constructed using a vertical DMOS structure. It has an N-channel structure and is designed to provide an enhancement-type operation when an appropriate gate voltage is applied to the gate. The device is capable of switching large currents (up to 36 A pulsed) and operating at voltages up to 200 V. It also has an ultra-low on-resistance of 0.319 ohms, allowing the device to draw very low power when in operation.

The IRF1104S utilizes the vertical DMOS structure, which combines the vertical conductivity of a DMOS transistor with the electrical characteristics of a MOSFET. This provides the IRF1104S with excellent thermal stability and long-term performance. Additionally, the vertical DMOS structure provides excellent RF performance, making the device well suited for high-frequency applications.

The primary application field of the IRF1104S is in automotive and consumer electronic applications, where it is used to control power management systems. By providing a low on-resistance, the device is able to draw less current than traditional MOSFETs. This saves power, resulting in improved system efficiency and lower maintenance costs. Additionally, the IRF1104S is designed for low-voltage dropout and can handle high surge currents, making it well suited for systems such as DC-DC converters.

The IRF1104S also has a variety of industrial, medical, and military applications. It is capable of providing high-voltage protection, allowing the device to be used in voltage protection systems such as lightning arresters and surge suppressors. Additionally, the device provides excellent EMI/RFI performance, making it well suited for applications such as automotive ignition systems.

The working principle of the IRF1104S is based on the behaviour of a MOSFET. The device is constructed using an N-channel structure, which means that current can only flow through the device when an appropriate voltage is applied to the gate terminal. When an appropriate voltage is applied to the gate the device allows current to flow from the source to the drain.

The amount of current allowed to flow can be controlled by varying the voltage applied to the gate. As the voltage applied to the gate increases, the amount of current allowed to flow increases. This makes the device ideal for applications such as power management systems where the amount of current drawn needs to be adjusted constantly.

In summary, the IRF1104S is a single N-channel power MOSFET that is designed for a variety of applications. It has an ultra-low on-resistance, allowing it to draw very small currents and operate at high voltages. Additionally, its vertical DMOS structure allows the device to provide excellent thermal stability and long-term reliability. It is also well suited for applications such as high-frequency and voltage protection, making it an ideal choice for automotive, consumer electronic, industrial, medical, and military applications.

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