IRF1404ZSTRR

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The IRF1404ZSTRR is an N-channel power MOSFET used in many high-power applications due to its high current capability. This power MOSFET can operate at voltages between 30 and 100 V, and can handle up to 74 A of continuous drain current. It is made with HEXFET technology, which is a process that relies on patented self-aligned coplanar gate structure to provide improved switching losses, ruggedized structure, and low on-resistance.

The IRF1404ZSTRR is a high power, fast switching device suitable for high-speed switching applications. It can be used in automotive, audio, video, and consumer electronics applications. It is also used for battery management systems and DC-DC converters. It has a wide operating temperature range of -55 to +150°C, making it suitable for harsh environments.

The IRF1404ZSTRR has a number of features that make it ideal for a variety of applications. It has an avalanche energy rated at 175mJ and can withstand pulses of up to 10s in duration. It has a low input capacitance of 2.45pF, making it suitable for high-speed switching applications. Its maximum drain-source voltage is 100V and it has a robust proven RDS(on) of 0.036 Ohms.

In terms of its working principle, the IRF1404ZSTRR is an N-channel MOSFET. This means that it is designed to control the flow of electrons between the source and the drain of the device. When a positive voltage is applied to the gate, it attracts electrons and attracts them to the gate region, creating a conducting channel between the source and the drain. The more positive the gate voltage, the larger this channel will become, allowing more current to flow between the source and the drain.

The IRF1404ZSTRR is a powerful and reliable device, suitable for a wide range of high power applications. Its features make it ideal for high-speed switching applications and for use in harsh environments. Its robust RDS(on) and low input capacitance make it a suitable choice for DC-DC converters, battery management systems, and other power-sensitive applications.

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