| Allicdata Part #: | IRF1018ESTRLPBFTR-ND |
| Manufacturer Part#: |
IRF1018ESTRLPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 60V 79A D2PAK |
| More Detail: | N-Channel 60V 79A (Tc) 110W (Tc) Surface Mount D2P... |
| DataSheet: |  IRF1018ESTRLPBF Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 100µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 110W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2290pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 69nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 8.4 mOhm @ 47A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 79A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The IRF1018ESTRLPBF is transistors categorized as a Field-Effect Transistor (FETs), specifically MOSFETs. In particular, it is a single MOSFET. It is produced by one of the top electronic part manufacturers – International Rectifier, and they have designed the MOSFET to be used in a variety of applications. In this article, we will discuss the applications and working principles behind the IRF1018ESTRLPBF MOSFET.Applications of the IRF1018ESTRLPBF The IRF1018ESTRLPBF MOSFET is suitable for a variety of applications. It is primarily used as a switch, it can drive resistive, capacitive, and inductive loads. It has low ON resistance, enabling it to be used in high-speed switching applications. It is also used in small signal switching and amplification applications.The IRF1018ESTRLPBF is especially well suited for crossbar switch matrices. This is because it is a low power dissipation switch as it is a single MOSFET with low ON resistance and low switching capacitance. It also has a low leakage current, making it ideal for a variety of high frequency applications. It is also used in automotive applications, such as airbag protection systems, brake systems, and fuel management systems.Working Principle of the IRF1018ESTRLPBF The IRF1018ESTRLPBF is a single MOSFET and is based on the principle of the Metal Oxide Field Effect Transistor (MOSFET). Basically, it consists of a metal oxide semiconductor between source and drain, which is a conductive channel for electrical current. By controlling the level of electric field over the gate terminal, the current passing from source to drain can be controlled.In order to control the current passing from source to drain, the voltage on the gate terminal needs to be varied between a certain threshold values. The source, drain, and gate terminal of the MOSFET are connected to an external circuit, and when a gate voltage is applied, current is allowed to flow through the channel.The threshold value is determined by the type of semiconductor used, typically silicon or gallium arsenide. Also, the gate resistance and capacitance have effect on the amount of current passing through the channel and the speed of switching respectively.Conclusion The IRF1018ESTRLPBF is a versatile single MOSFET which is suited for a variety of applications. It is used as a low power switch, and can also be used for amplification and high frequency applications. The working principle of the MOSFET is based on the Metal Oxide Field Effect Transistor, and its performance is determined by the level of voltage on the gate terminal and the type of semiconductor used in the channel.
The specific data is subject to PDF, and the above content is for reference
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