Allicdata Part #: | IRF1405ZS-7P-ND |
Manufacturer Part#: |
IRF1405ZS-7P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 120A D2PAK7 |
More Detail: | N-Channel 55V 120A (Tc) 230W (Tc) Surface Mount D2... |
DataSheet: | IRF1405ZS-7P Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 150µA |
Package / Case: | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
Supplier Device Package: | D2PAK (7-Lead) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 230W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5360pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 230nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 4.9 mOhm @ 88A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRF1405ZS-7P is a high-voltage, high-current N-Channel MOSFET that is often used in various applications, from power supplies to digital switching. It is a high-performance device that is reliable, efficient, and cost-effective.
The Application Field of the IRF1405ZS-7P
The IRF1405ZS-7P is widely used in a variety of applications. It can be used in applications such as motor driver controls, DC-DC converters, power switching, and more. It is also used in applications requiring high-current drive, such as power amplifiers. Additionally, it is used in switching power supply circuits, power factor correction circuits, and more.
The IRF1405ZS-7P is ideal for use in power management applications, as it can handle up to 50A of current and has a voltage range of 0V to 800V. It is also suitable for high-temperature applications, as its maximum junction temperature is 175°C. It is also relatively easy to use, with its low on-resistance, low gate charge, and fast switching speed.
The Working Principle of the IRF1405ZS-7P
The IRF1405ZS-7P is a N-channel MOSFET, which means it has an N-type channel between the two terminals. This channel is what allows the device to conduct current. When a voltage is applied to the gate terminal, it creates an electric field in the N-type channel, which in turn causes a channel to form between the source and drain terminals, allowing current to flow. When the gate voltage is removed, the channel collapses and current is blocked from flowing. This makes the IRF1405ZS-7P excellent for various switching applications, as the device can turn the current on and off quickly and precisely.
The IRF1405ZS-7P is also protected against overvoltage, as it features a built-in Zener diode that limits the amount of current flowing through the device. This is important in high-temperature environments, where a conventional MOSFET might suffer permanent damage due to excessive current.
The IRF1405ZS-7P is a reliable and efficient device, which is why it is so widely used in a variety of applications. It is relatively easy to use and can handle large currents and voltages, making it an ideal choice for a wide range of power management applications.
The specific data is subject to PDF, and the above content is for reference
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