Allicdata Part #: | IRF1503PBF-ND |
Manufacturer Part#: |
IRF1503PBF |
Price: | $ 1.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 75A TO-220AB |
More Detail: | N-Channel 30V 75A (Tc) 330W (Tc) Through Hole TO-2... |
DataSheet: | IRF1503PBF Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 1.04549 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 330W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5730pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 200nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 3.3 mOhm @ 140A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IRF1503PBF is a P-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a part of the IRF1503 family, with a voltage rating of 30V and current rating of 90A, and it is commonly used in auto and telecom industry. This article discusses the application area and working principle of this MOSFET.
Application Area
The IRF1503PBF is used in many applications, including:
- Automotive – This MOSFET is used in automotive applications such as powertrain and engine control systems, DC-DC converters, and heated seat control.
- Telecom – It is used in telecom applications such as wireless power amplifier, base station peak power detector, line protection, and frequency synthesizer.
- Power Supply – This MOSFET is mainly used for voltage regulation, DC-DC converters, load and line regulation, and audio amplifiers.
- Industrial – It is used in industrial applications such as motor control, and power supplies.
The IRF1503PBF is also used in high-end consumer products such as audio amplifiers, home automation systems, and digital to analog converters (DACs).
Working Principle
The IRF1503PBF is a P-channel enhancement type MOSFET. It is designed with a p-type silicon channel which is sandwiched between two n-type gates. When a potential difference is applied between the two gates, it would create an electric field in the channel of the MOSFET, which causes electrons to be attracted to the negative gate, reducing the resistance of the channel, and allowing current to flow. This process is commonly known as the ‘enhancement mode’.
The resistivity of the channel of this MOSFET is determined by the gate to source voltage and the width of the channel. As the voltage applied between the two gates increases, the resistivity increases, allowing more current to flow through the device. This is important because it allows the MOSFET to be used to control the current flow. A voltage can be used to regulate the flow of current, which makes it possible to control the device from a distance.
Furthermore, this MOSFET has a breakdown voltage of 30V, and a peak current of 90A. This makes it suitable for applications where high voltages and/or high currents are required. The device also features a fast switching speed, which is essential for applications such as motor control and power supplies.
Conclusion
The IRF1503PBF is a P-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a part of the IRF1503 family and it is commonly used in autos and telecom industry. This article discussed the application areas and working principle of this MOSFET. It is mainly used in automotive, telecom, industrial, and power supply applications. This MOSFET is designed with a p-type silicon channel which is sandwiched between two n-type gates. When a potential difference is applied between the two gates, it creates an electric field in the channel of the MOSFET, which causes electrons to be attracted to the negative gate, reducing the resistance of the channel, and allowing current to flow. Furthermore, it has a breakdown voltage of 30V, and a peak current of 90A. This makes it suitable for applications where high voltages and/or high currents are required. The device also features a fast switching speed, which is essential for applications such as motor control and power supplies.
The specific data is subject to PDF, and the above content is for reference
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