IRF3515L Allicdata Electronics
Allicdata Part #:

IRF3515L-ND

Manufacturer Part#:

IRF3515L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 150V 41A TO-262
More Detail: N-Channel 150V 41A (Tc) 200W (Tc) Through Hole TO-...
DataSheet: IRF3515L datasheetIRF3515L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 45 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRF3515L is a single N-channel enhancement-mode power field effect transistor which uses the latest advanced process technology. The casing of the IRF3515L is insulated, so that it can accommodate a high voltage differential between its main terminal. The high transistor capacity is also suitable for use in almost all applications requiring higher switching power.

Application Field

The applications of the IRF3515L include power switching and DC-DC conversion, audio amplifiers, motor control, and high-speed switching circuits in DC loads. The IRF3515L power transistor can also be used in any inductive-load switching application, such as DC motors, solenoids, and lighting loads. The IRF3515L is suitable for use with a battery pack, such as a 9V cell pack.

Working Principle

In its active region, the IRF3515L produces a voltage across its terminals, when a current is applied. The voltage drop across the device is directly proportional to the current passing through the device. When a high current is passed through the device, it will cause a large voltage drop, resulting in a high power dissipation. In order to reduce this power dissipation, the device is designed to have a low threshold voltage. This reduces the voltage drop across the device and thus reduce power dissipation in the device.

The IRF3515L is an enhancement-type device, which means that it produces a negative voltage at its main terminal when a current is passed through it. This increases the current carrying capacity of the device and thus reduces the power dissipation.In order to reduce the power loss in the device, it is designed such that its drain-source voltage is kept as low as possible.

The IRF3515L is constructed using the latest advanced process technology. This technology is used to reduce the die size, resulting in low leakage current and low on-state resistance. This enables the device to operate at higher frequencies, with higher current capacities. The device also has a low thermal resistance and a low gate charge, resulting in faster switching times.

In addition to the aforementioned advantages, the IRF3515L also offers an extended temperature range, with an operational temperature range of -55°C to 175°C. This makes it suitable for use in any environment, and in any application.

The IRF3515L is an excellent choice for use in high-power switching applications, where high power savings, high efficiency and high reliability are desired. The device is also suitable for use in low voltage applications where a high current carrying capacity is required. Thanks to its extended temperature range, the device is also suitable for use in high temperature environments, such as motor control and high-speed switching circuits.

The specific data is subject to PDF, and the above content is for reference

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