| Allicdata Part #: | IRF3515L-ND |
| Manufacturer Part#: |
IRF3515L |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 150V 41A TO-262 |
| More Detail: | N-Channel 150V 41A (Tc) 200W (Tc) Through Hole TO-... |
| DataSheet: | IRF3515L Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | TO-262 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 200W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2260pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 107nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 45 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 41A (Tc) |
| Drain to Source Voltage (Vdss): | 150V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IRF3515L is a single N-channel enhancement-mode power field effect transistor which uses the latest advanced process technology. The casing of the IRF3515L is insulated, so that it can accommodate a high voltage differential between its main terminal. The high transistor capacity is also suitable for use in almost all applications requiring higher switching power.
Application Field
The applications of the IRF3515L include power switching and DC-DC conversion, audio amplifiers, motor control, and high-speed switching circuits in DC loads. The IRF3515L power transistor can also be used in any inductive-load switching application, such as DC motors, solenoids, and lighting loads. The IRF3515L is suitable for use with a battery pack, such as a 9V cell pack.
Working Principle
In its active region, the IRF3515L produces a voltage across its terminals, when a current is applied. The voltage drop across the device is directly proportional to the current passing through the device. When a high current is passed through the device, it will cause a large voltage drop, resulting in a high power dissipation. In order to reduce this power dissipation, the device is designed to have a low threshold voltage. This reduces the voltage drop across the device and thus reduce power dissipation in the device.
The IRF3515L is an enhancement-type device, which means that it produces a negative voltage at its main terminal when a current is passed through it. This increases the current carrying capacity of the device and thus reduces the power dissipation.In order to reduce the power loss in the device, it is designed such that its drain-source voltage is kept as low as possible.
The IRF3515L is constructed using the latest advanced process technology. This technology is used to reduce the die size, resulting in low leakage current and low on-state resistance. This enables the device to operate at higher frequencies, with higher current capacities. The device also has a low thermal resistance and a low gate charge, resulting in faster switching times.
In addition to the aforementioned advantages, the IRF3515L also offers an extended temperature range, with an operational temperature range of -55°C to 175°C. This makes it suitable for use in any environment, and in any application.
The IRF3515L is an excellent choice for use in high-power switching applications, where high power savings, high efficiency and high reliability are desired. The device is also suitable for use in low voltage applications where a high current carrying capacity is required. Thanks to its extended temperature range, the device is also suitable for use in high temperature environments, such as motor control and high-speed switching circuits.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| IRF3710PBF | Infineon Tec... | -- | 29557 | MOSFET N-CH 100V 57A TO-2... |
| IRF3205STRRPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 110A D2PA... |
| IRF3707PBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 62A TO-22... |
| IRF3706STRLPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 20V 77A D2PAK... |
| IRF3707ZCSTRLP | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 59A D2PAK... |
| IRF3709ZCSTRR | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 87A D2PAK... |
| IRF3708SPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 62A D2PAK... |
| IRF3704ZCSTRLP | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 20V 67A D2PAK... |
| IRF3709ZSTRLPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 87A D2PAK... |
| IRF3710STRR | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 57A D2PA... |
| IRF3007PBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 75V 75A TO-22... |
| IRF3704STRLPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 20V 77A D2PAK... |
| IRF3707 | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 62A TO-22... |
| IRF36ER821K | Vishay Dale | 0.07 $ | 1000 | IRF-36 820 10% ER E3820H ... |
| IRF3515STRLPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 150V 41A D2PA... |
| IRF3808PBF | Infineon Tec... | -- | 1410 | MOSFET N-CH 75V 140A TO-2... |
| IRF3707ZLPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 59A TO-26... |
| IRF3710STRRPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 57A D2PA... |
| IRF3515S | Infineon Tec... | -- | 1000 | MOSFET N-CH 150V 41A D2PA... |
| IRF3709ZCSTRL | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 87A D2PAK... |
| IRF3415SPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 150V 43A D2PA... |
| IRF3710ZPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 59A TO-2... |
| IRF3709 | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 90A TO-22... |
| IRF3709ZL | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 87A TO-26... |
| IRF3805L-7PPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 160A TO-2... |
| IRF3805S | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 75A D2PAK... |
| IRF3704ZCLPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 20V 67A TO-26... |
| IRF36ER680K | Vishay Dale | 0.07 $ | 1000 | IRF-36 68 10% ER E368H Un... |
| IRF3515L | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 150V 41A TO-2... |
| IRF3710LPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 57A TO-2... |
| IRF3711ZSTRR | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 20V 92A D2PAK... |
| IRF3704ZPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 20V 67A TO-22... |
| IRF3711ZCSTRRP | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 20V 92A D2PAK... |
| IRF36ER561K | Vishay Dale | 0.07 $ | 1000 | IRF-36 560 10% ER E3560H ... |
| IRF3315PBF | Infineon Tec... | -- | 694 | MOSFET N-CH 150V 23A TO-2... |
| IRF3707ZSTRLPBF | Infineon Tec... | 0.88 $ | 1000 | MOSFET N-CH 30V 59AN-Chan... |
| IRF3709ZS | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 87A D2PAK... |
| IRF3710ZSPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 59A D2PA... |
| IRF3205LPBF | Infineon Tec... | -- | 1126 | MOSFET N-CH 55V 110A TO-2... |
| IRF3415PBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 150V 43A TO-2... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...
IRF3515L Datasheet/PDF