IRF3711ZCSTRRP

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRF3711ZCSTRRP integrated circuit is a single N-channel MOSFET with enhanced features for use in a variety of application fields including power supplies, portable and automotive electronics, motor control and industrial equipment, and consumer applications. This device is specifically designed to provide the high level of performance and protection that make it ideal for use in these applications.

The IRF3711ZCSTRRP is a highly efficient device that helps reduce power consumption and energy wastage. It has extremely low on-state resistance (RDSON) of 0.012Ω and a very low gate source capacitance (CGS). Its wide operating capacitance range (75A – 350A) makes it suitable for a variety of applications, including switching, rectification, and DC-DC conversion. Furthermore, its exceptional speed and low total gate charge (Qg) make it an ideal choice for high power switching applications.

The IRF3711ZCSTRRP uses a C-MOS technology that provides a high level of integration with small dimensions and weight. It offers an excellent thermal efficiency and has an extremely low operating temperature junction (Tj). Its total gate charge, Qg, is very low, and its extremely small package size gives it superior high frequency operation. The device is also designed with an internal ESD protection to ensure a high degree of reliability. Additionally, the gate-source voltage-to-drain current behavior is linear over the entire drain-source voltage range.

In terms of its working principle, the IRF3711ZCSTRRP uses the P-type substrate of the MOSFET as the "gate" of the MOSFET. When an appropriate voltage is applied to the gate, a current will flow through the P-type substrate. This current flow drives up the voltage at the drain terminal, which in turn causes current to flow through the drain-source path. This allows for very efficient control of the source current and its associated load. Furthermore, the device is capable of withstanding in excess of 500V at its drain-source junction. This helps ensure that the circuit will continue to remain stable even in the most extreme conditions.

In summary, the IRF3711ZCSTRRP single N-channel MOSFET is a highly efficient, reliable device with a wide variety of applications. Its small size, low power consumption, and exceptional speed make it an ideal choice for a variety of applications. Furthermore, its high voltage tolerance, low total gate charge, and linear gate-source voltage-to-drain current behavior ensure that the device can operate reliably in extreme conditions. This makes the IRF3711ZCSTRRP an excellent choice for industrial and consumer electronic applications.

The specific data is subject to PDF, and the above content is for reference